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Seeded Growth of Si Over SiO2 Substrates by CW Laser Irradiation

Published online by Cambridge University Press:  15 February 2011

L. E. Trimble ,
G. K. Celler ,
K. K. Ng ,
H. Baumgart  and
H. J. Leamy
L. E. Trimble
Affiliation:
Bell Laboratories, Murray Hill, New Jersey, 7974, USA
G. K. Celler
Affiliation:
Bell Laboratories, Murray Hill, New Jersey, 7974, USA
K. K. Ng
Affiliation:
Bell Laboratories, Murray Hill, New Jersey, 7974, USA
H. Baumgart
Affiliation:
Bell Laboratories, Murray Hill, New Jersey, 7974, USA
H. J. Leamy
Affiliation:
Bell Laboratories, Murray Hill, New Jersey, 7974, USA
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Abstract

Seeded epitaxial growth of Si over SiO2 is demonstrated in two types of structures. In the first case, rectangular pads of deposited Si were recessed into a thick SiO2 film. Narrow (≃ 5μm) via holes in SiO2 linked the pads with the bulk Si substrates. In the second embodiment, SiO2 patterns were recessed into the Si wafers which were then covered with a continuous 0.5μm poly-Si layer. In both cases, nearly planar geometries were maintained by use of local oxidation and etching techniques. Silicon was recrystallized with a focused Ar+ laser beam. Depending on the scanning conditions and the Si pattern geometry, single crystal growth propagated between 30 and >500μm. The factors influencing the extent and quality of the crystallized regions are discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 4: Symposium A – Laser and Electron-Beam Interactions with Solids , 1981 , 505
Copyright
Copyright © Materials Research Society 1982

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References

REFERENCES

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