Hostname: page-component-8448b6f56d-gtxcr Total loading time: 0 Render date: 2024-04-19T23:22:16.762Z Has data issue: false hasContentIssue false
  • English
  • Français

Screen-Grid Field Effect Transistor for sensing Bio-Molecules

Published online by Cambridge University Press:  31 January 2011

Kwee Guan Eng ,
Kristel Fobelets  and
Enrique Velazquez-Perez
Kwee Guan Eng
Affiliation:
engkg24@yahoo.com.sg, Imperial College London, Electrical and Electronic Engineering, London, United Kingdom
Kristel Fobelets
Affiliation:
k.fobelets@imperial.ac.uk, Imperial College London, Electrical and Electronic Engineering, London, United Kingdom
Enrique Velazquez-Perez
Affiliation:
js@usal.es, Universidad de Salamanca, Departmento de Física Aplicada, Salamanca, Spain
Get access

Abstract

A novel field effect transistor, based on the Screen Grid Field Effect Transistor concept, is proposed with an integrated Coulter Counter pore for amplification of the sensing signal. 3D TCAD simulations are performed on the use of the Coulter Counter Field Effect Transistor (CCFET) to detect the Influenza A virus. The gate of the transistor is the pore through which the bioparticles pass. This passage causes a change in the electrostatic conditions of the gate and thus changes the source-drain current, similar to ISFET operation. The structure of the CC-FET is optimised for bio-sensing and multi-particle passage through the gate hole is simulated. TCAD results show that the CC-FET is capable of multi-particle and particle size detection.

Keywords

sensornanostructuremicroelectronics
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1191: Symposium OO – Materials and Strategies for Lab-on-a-Chip–Biological Analysis, Cell-Material Interfaces and Fluidic Assembly Assembly of Nanostructures , 2009 , 1191-OO11-05
Copyright
Copyright © Materials Research Society 2009

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Malhotra, B.D., Singhal, R. Chaubey, A. Sharma, S.K., and Kumar, A. “Recent trends in biosensors,” Curr. Appl. Physics 5(2), 92–97 (2005).10.1016/j.cap.2004.06.021Google Scholar
2 Bergveld, P. Sibbald, A. “Analytical and biomedical applications of ion-selective field-effect transistors”, Elsevier (1988).Google Scholar
3 DeBlois, R.W., and Bean, C.P., “Counting and sizing of submicron particles by resistive pulse technique”. Rev. Sci. Instrum. 41, 909–916 (1970).10.1063/1.1684724Google Scholar
4 Henriquez, R. R. Ito, T. Sun, L. and Crooks, R. M. “The resurgence of Coulter counting for analyzing nanoscale objects”, Analyst 129, 478–482 (2004).10.1039/b404251bGoogle Scholar
5Technology Computer Aided DesignGoogle Scholar
6 Fobelets, K. Ding, P.W., and Velazquez-Perez, J. E., “A novel 3D embedded gate field effect transistor – Screen-grid FET – Device concept and modelling”, Solid State Electronics 51(5), 749–756 (2007).10.1016/j.sse.2007.02.032Google Scholar
7 Shur, M. “Physics of Semiconductor Devices”, chapter 4, Prentice Hall Series in Solid State Physical Electronics (1990).Google Scholar
8 Pandey, S. White, M. H., “Detection of Dielectrophoretic Driven Passage of Single Cells through Micro-Apertures in a Silicon Nitride Membrane”, Proceedings of the 26th Annual International Conference of the IEEE EMBS San Francisco, CA, USA September 1-5, 2004.Google Scholar
9 Schoning, M. J. and Poghossian, A. “Recent advances in biologically sensitive field-effect transistors (BioFETs)”, Analyst 127, 1137–1151 (2002).10.1039/B204444GGoogle Scholar
10http://www.synopsys.com/Google Scholar
11“The Zeta (ε) potential is the electrostatic potential that exists at the shear plane of a particle, which is related to both surface charge and the local environment of the particle” http://www.fen.bilkent.edu.tr/˜ozbay/Papers/166–08-biomicrodevice.pdfGoogle Scholar