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Schottky Contacts Formed on Phosphidized InGaAs

Published online by Cambridge University Press:  22 February 2011

Takashi Sugino ,
Yoshifumi Sakamoto ,
Hideaki Ninomiya ,
Koichiro Matsuda  and
Junji Shirafuji
Takashi Sugino
Affiliation:
Department of Electrical Engineering, Faculty of Engineering, Osaka University, 2–1 Yamadaoka, Suita, Osaka 565, Japan
Yoshifumi Sakamoto
Affiliation:
Department of Electrical Engineering, Faculty of Engineering, Osaka University, 2–1 Yamadaoka, Suita, Osaka 565, Japan
Hideaki Ninomiya
Affiliation:
Department of Electrical Engineering, Faculty of Engineering, Osaka University, 2–1 Yamadaoka, Suita, Osaka 565, Japan
Koichiro Matsuda
Affiliation:
Horiba, Ltd. Miyanohigashi, Kisshoin, Minami-ku, Kyoto 601, Japan
Junji Shirafuji
Affiliation:
Department of Electrical Engineering, Faculty of Engineering, Osaka University, 2–1 Yamadaoka, Suita, Osaka 565, Japan
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Abstract

The surface of InGaAs (In 53 %) lattice-matched to InP has been phosphidized using phosphine plasma. X-ray photoelectron spectroscopy analysis indicates that substitution of phosphorus for arsenic and deposition of phosphorus layer occur due to phosphidization. Formation of indium and arsenic oxides is suppressed at the phosphidized surface of InGaAs, while phosphorus oxide is observed. Tunneling metal-insulator-semiconductor type Schottky contacts are formed on phosphidized InGaAs by evaporating various metals such as Au, Cu, Ti and Al. An effective barrier height as high as 0.7 eV is evaluated from the room temperature current-voltage characteristic for Au/InGaAs Schottky contacts. The true barrier height estimated from the Richardson plot varies depending on the metal work function.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 300: Symposium D1 – III-V Electronic and Photonic Device Fabrication and Performance , 1993 , 231
Copyright
Copyright © Materials Research Society 1993

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References

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