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Schottky Barrier Heights of A1/p-Sil-xGex

Published online by Cambridge University Press:  15 February 2011

R. L. Jiang ,
J. Li ,
X. C. Zhou ,
J. N. Liu  and
Y. D. Zheng
R. L. Jiang
Affiliation:
Department of Physics, Nanjing University, Nanjing 210008, P. R. China
J. Li
Affiliation:
Department of Physics, Nanjing University, Nanjing 210008, P. R. China
X. C. Zhou
Affiliation:
Department of Physics, Nanjing University, Nanjing 210008, P. R. China
J. N. Liu
Affiliation:
Department of Physics, Nanjing University, Nanjing 210008, P. R. China
Y. D. Zheng
Affiliation:
Department of Physics, Nanjing University, Nanjing 210008, P. R. China
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Abstract

Electrical properties of Al/p-Sil-xGex Schottky contacts were investigated. The Sil-xGexstrained layers were grown by using Rapid Thermal Process/Very Low Pressure-Chemical Vapor Deposition. It was found that Schottky barrier height decreased with increasing Ge fraction. The decrement is in accordance with the decrement of the bandgap of the strained Sil-xGex. The Fermi level at the interface is pinned at about 0. 43eV below the conduction band. The influence of strain relaxation for SiGe alloy layers and the Si cap layers on the properties of Schottky contacts were also investigated.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 379: Symposium C – Strained Layer Epitaxy–Materials, Processing, and Devise Applications , 1995 , 223
Copyright
Copyright © Materials Research Society 1995

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References

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