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Schottky barrier height tuning by Hybrid organic-inorganic multilayers

Published online by Cambridge University Press:  29 April 2014

V. Torrisi ,
M. A. Squillaci ,
F. Ruffino ,
I. Crupi ,
M.G. Grimaldi  and
G. Marletta
V. Torrisi
Affiliation:
Laboratory for Molecular Surface and Nanotechnology (LAMSUN), Department of Chemical Sciences, University of Catania and CSGI, Viale A. Doria 6, 95125, Catania, Italy.
M. A. Squillaci
Affiliation:
Laboratory for Molecular Surface and Nanotechnology (LAMSUN), Department of Chemical Sciences, University of Catania and CSGI, Viale A. Doria 6, 95125, Catania, Italy.
F. Ruffino
Affiliation:
Dipartimento di Fisica ed Astronomia-Università di Catania, and MATIS IMM-CNR, via S. Sofia 64 95128 Catania, Italy.
I. Crupi
Affiliation:
Dipartimento di Fisica ed Astronomia-Università di Catania, and MATIS IMM-CNR, via S. Sofia 64 95128 Catania, Italy.
M.G. Grimaldi
Affiliation:
Dipartimento di Fisica ed Astronomia-Università di Catania, and MATIS IMM-CNR, via S. Sofia 64 95128 Catania, Italy.
G. Marletta
Affiliation:
Laboratory for Molecular Surface and Nanotechnology (LAMSUN), Department of Chemical Sciences, University of Catania and CSGI, Viale A. Doria 6, 95125, Catania, Italy.
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Abstract

Semiconducting and insulating polymers and copolymers/Au nanograins based hybrid multilayers (HyMLs) were fabricated on p-Si single-crystal substrate by an iterative method that involves, respectively, Langmuir-Blodgett and spin-coating techniques (for the deposition of organic film) and sputtering technique (for the deposition of metal nanograins) to prepare Au/HyMLs/p-Si Schottky device. The electrical properties of the Au/HyMLs/p-Si Schottky device were investigated by current-voltage (I–V) measurements in the thickness range of 1-5 bilayers (BL).

At different number of layers, current-voltage (I–V) measurements were performed. Results showed a rectifying behavior. Junction parameters, such as barrier height (BH), from the I–V measurements for example for the PMMA-b-PS based Au/HyMLs/p-Si structure were obtained as 0.72±0.02 eV at 1BL and 0.64±0.02eV at 5BL. It was observed that the BH value of 0.61 eV obtained for the 5 BL PS based Au/HyMLs/p-Si structure was lower than the value of 0.68 eV of conventional Au/p-Si Schottky diodes. Thus, modification of the interfacial potential barrier for Au/p-Si diodes has been achieved using a thin MLs of different polymers based HyMls semiconductor.

Keywords

Auelectrical propertiespolymer
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1660: Symposium TT – Transport Properties in Nanocomposites , 2014 , mrsf13-1660-tt05-07
Copyright
Copyright © Materials Research Society 2014 

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References

REFERENCES

Aydin, M. E., Yakuphanoğlu, F., Eom, J.-H., and Hwang, D.-H., Physica B 387, 239 (2007).10.1016/j.physb.2006.04.012CrossRefGoogle Scholar
Kavasoğlu, N., Tozlu, C., Pakma, O., Kavasoğlu, A. S., Özden, S., Metin, B., Birgi, O., and Öktik, Ş, Synth. Met. 159, 1880 (2009).10.1016/j.synthmet.2009.06.015CrossRefGoogle Scholar
Aydoğan, Ş., Sağlam, M., Türüt, A., and Onganer, Y., Mater. Sci. Eng. C 29, 1486 (2009).10.1016/j.msec.2008.12.006CrossRefGoogle Scholar
Güllü, Ö., Kılıçoğlu, T., and Türüt, A., J. of Phys. and Chem. of Solids 71, 351 (2010).10.1016/j.jpcs.2009.12.089CrossRefGoogle Scholar
Güllü, Ö. and Türüt, A., Microelectron. Eng. 87, 2482 (2010).10.1016/j.mee.2010.05.004CrossRefGoogle Scholar
Aydoğan, S., Ĭncekara, Ü., Deniz, A. R., and Türüt, A., Microelectron. Eng. 87, 2525 (2010).10.1016/j.mee.2010.06.004CrossRefGoogle Scholar
Sönmezoğlu, S., Şenkul, S., Taş, R., Çankaya, G., and Can, M., Thin Solid Films 518, 4375 (2010).10.1016/j.tsf.2010.01.042CrossRefGoogle Scholar
Kılıçoğlu, T., Aydın, M. E., Topal, G., Ebeoğlu, M. A., and Saygıl&imath, H.;, Synth. Met. 157, 540 (2007).10.1016/j.synthmet.2007.06.001CrossRefGoogle Scholar
Yüksel, Ö. F., Tuğluoğlu, N., Şafak, H., Ku&scedil, M.;, J. of Appl. Phys. 113, 044507 (2013).10.1063/1.4789021CrossRefGoogle Scholar
Gupta, R., Misra, S.C.K., Malhotra, B.D., Baladakere, N.N., Chandra, S., Appl. Phys. Lett. 58, 51 (1991).10.1063/1.104441CrossRefGoogle Scholar
Torrisi, V., Ruffino, F., Isgrò, G., Crupi, I., Li Destri, G., Grimaldi, M. G., Marletta, G., Appl. Phys. Lett. 103, 193117 (2013).10.1063/1.4829532CrossRefGoogle Scholar
Li Destri, G., Torrisi, V., Marletta, G., AIP Conference Proceedings 1459, 17 (2012).10.1063/1.4738384CrossRefGoogle Scholar
Torrisi, V., Ruffino, F., Licciardello, A., Grimaldi, M. G., Marletta, G., Nanoscale Res. Lett. 6, 167 (2011).10.1186/1556-276X-6-167CrossRefGoogle Scholar
Gupta, R. K., Singh, R. A., Journal of Polymer Research 11, 269 (2004).10.1007/s10965-005-2412-2CrossRefGoogle Scholar
Rhoderick, E. H. and Williams, R. H., Metal–Semiconductor Contacts, 2 nd ed. (Clarendon, Oxford, 1988).Google Scholar