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Scanning tunneling microscopy observation of surface reconstruction of GaN on sapphire and 6H-SiC

Published online by Cambridge University Press:  10 February 2011

A. R. Smith ,
V. Ramachandran ,
R. M. Feenstra ,
D. W. Greve ,
J. Neugebauer ,
J. E. Northrup ,
M. Shin  and
M. Skowronski
A. R. Smith
Affiliation:
Department of Physics, Carnegie Mellon University, Pittsburgh, PA 15213
V. Ramachandran
Affiliation:
Department of Physics, Carnegie Mellon University, Pittsburgh, PA 15213
R. M. Feenstra
Affiliation:
Department of Physics, Carnegie Mellon University, Pittsburgh, PA 15213
D. W. Greve
Affiliation:
Department of Electrical and Computer Engineering, Carnegie Mellon University
J. Neugebauer
Affiliation:
Fritz-Haber Institut der Max-Planck-Gesellschaft, Faradayweg 4-6, D14195 Berlin, Germany
J. E. Northrup
Affiliation:
Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, CA 94304
M. Shin
Affiliation:
Department of Materials Science, Carnegie Mellon University
M. Skowronski
Affiliation:
Department of Materials Science, Carnegie Mellon University
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Abstract

We report studies of the surface structure of MBE-grown GaN layers on sapphire (0001) and 6H-(0001) SiC substrates. A different set of reconstructions is observed for nitrogen-face and gallium-face layers. The gallium-face has so far only been grown on MOCVD GaN/ sapphire substrates, while the nitrogen-face has been obtained on SiC and bare sapphire substrates.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 482 , 1997 , 363
Copyright
Copyright © Materials Research Society 1998

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