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Saturation of Metastable-Defect Density in a-Si:H

Published online by Cambridge University Press:  25 February 2011

David Redfield  and
Richard H. Bube
David Redfield
Affiliation:
Dept. of Materials Science & Engineering, Stanford University, Stanford, CA 94305
Richard H. Bube
Affiliation:
Dept. of Materials Science & Engineering, Stanford University, Stanford, CA 94305
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Abstract

The existence of saturation (or steady state) in the density of light-induced defects in amorphous Si:H is shown to have major importance for the interpretation of the nature and origin of these defects. First, a number of characteristics of the steady-state and transient responses to light and temperature are described and contrasted. These lead to the conclusion that the saturation value is the only useful criterion of the number of defects in these materials. We then describe a new atomic model for defects, unifying both dopant-induced and light-induced defects. This model invokes foreign atoms in defects, and saturation reflects the limitation imposed by the numbers of such atoms. Many other observed properties of defects are explained by this model.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 192: Symposium O – Amorphous Silicon Technology - 1990 , 1990 , 273
Copyright
Copyright © Materials Research Society 1990

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References

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