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Rubrene Single-crystal Organic Field Effect Transistor with Laser Ablated BaTiO3 Epitaxial Growth Thin-film as High-k Insulator

Abstract

High quality BaTiO3 thin film epitaxially grown on a Nb-doped SrTiO3 (BTO/Nb-STO) substrate by a laser ablation technique is employed as a high-k gate insulator for a field-effect transistor of a rubrene single crystal in order to search for the possibility of high carrier accumulation. The high dielectric constant of 280 esu for the prepared BaTiO3 thin film accumulates 0.1 holes/rubrene-molecule, which is 2.5 times as high as the maximum carrier number of 0.04 holes/rubrene-molecule attained in the case of SiO2 gate insulator. Important parameters of rubrene single crystal FETs on BTO/Nb- STO are also described in comparison with those on SiO2/doped-Si.

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Keywords

Rubrene Single-crystal Organic Field Effect Transistor with Laser Ablated BaTiO3 Epitaxial Growth Thin-film as High-k Insulator

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