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Rubrene Single-crystal Organic Field Effect Transistor with Laser Ablated BaTiO3 Epitaxial Growth Thin-film as High-k Insulator

Published online by Cambridge University Press:  26 February 2011

Nobuya Hiroshiba ,
Ryotaro Kumashiro ,
Taishi Takenobu ,
Naoya Komatsu ,
Yusuke Suto ,
Yoshihiro Iwasa ,
Kenta Kotani ,
Iwao Kawayama ,
Masayoshi Tonouchi  and
Katsumi Tanigaki
Nobuya Hiroshiba
Affiliation:
hiro48n@sspns.phys.tohoku.ac.jp, Tohoku University, Department of Physics, 6-3 Aoba, Aramaki, Aoba, Sendai, 980-8578, Japan, +91-22-795-6468, +91-22-795-6470
Ryotaro Kumashiro
Affiliation:
rkuma@sspns.phys.tohoku.ac.jp, Tohoku University, Department of Physics, 6-3 Aoba, Aramaki, Aoba, Sendai, 980-8578, Japan
Taishi Takenobu
Affiliation:
takenobu@imr.tohoku.ac.jp, Tohoku University, IMR, Sendai, 980-8578, Japan
Naoya Komatsu
Affiliation:
komatsu@sspns.phys.tohoku.ac.jp, Tohoku University, Department of Physics, 6-3 Aoba, Aramaiki, Aoba, Sendai, 980-8578, Japan
Yusuke Suto
Affiliation:
suto@sspns.phys.tohoku.ac.jp, Tohoku University, Department of Physcis, 6-3 Aoba, Aramaki, Aoba, Sendai, 980-8578, Japan
Yoshihiro Iwasa
Affiliation:
iwasa@imr.tohoku.ac.jp, Tohoku University, IMR, Sendai, 980-8578, Japan
Kenta Kotani
Affiliation:
kenta@ile.osaka-u.ac.jp, Osaka University, Osaka, 565-0871, Japan
Iwao Kawayama
Affiliation:
kawayama@ile.osaka-u.ac.jp, Osaka University, Osaka, 565-0871, Japan
Masayoshi Tonouchi
Affiliation:
tonouchi@ile.osaka-u.ac.jp, Osaka University, Osaka, 565-0871, Japan
Katsumi Tanigaki
Affiliation:
tanigaki@sspns.phys.tohoku.ac.jp, Tohoku University, Department of Physics, 6-3 Aoba, Aramaki, Aoba, Sendai, 980-8578, Japan
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Abstract

High quality BaTiO3 thin film epitaxially grown on a Nb-doped SrTiO3 (BTO/Nb-STO) substrate by a laser ablation technique is employed as a high-k gate insulator for a field-effect transistor of a rubrene single crystal in order to search for the possibility of high carrier accumulation. The high dielectric constant of 280 esu for the prepared BaTiO3 thin film accumulates 0.1 holes/rubrene-molecule, which is 2.5 times as high as the maximum carrier number of 0.04 holes/rubrene-molecule attained in the case of SiO2 gate insulator. Important parameters of rubrene single crystal FETs on BTO/Nb- STO are also described in comparison with those on SiO2/doped-Si.

Keywords

organicelastic propertiesdielectric
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 965: Symposium S – Organic Electronics – Materials, Devices and Applications , 2006 , 0965-S08-04
Copyright
Copyright © Materials Research Society 2007

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References

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