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Roughness Analysis of Episurfaces Grown on Ion-Beam Processed GaSb Substrates

Published online by Cambridge University Press:  26 February 2011

K. Krishnaswami ,
D. B. Fenner ,
S. R. Vangala ,
C. Santeufemio ,
M. Grzesik ,
L. P. Allen ,
G. Dallas  and
W. D. Goodhue
K. Krishnaswami
Affiliation:
Photonics Center, Dept. of Physics, University of Massachusetts, Lowell, MA 01854
D. B. Fenner
Affiliation:
Dept. of Physics, University of Connecticut, Storrs, CT 06269
S. R. Vangala
Affiliation:
Photonics Center, Dept. of Physics, University of Massachusetts, Lowell, MA 01854
C. Santeufemio
Affiliation:
Photonics Center, Dept. of Physics, University of Massachusetts, Lowell, MA 01854
M. Grzesik
Affiliation:
Photonics Center, Dept. of Physics, University of Massachusetts, Lowell, MA 01854
L. P. Allen
Affiliation:
Galaxy Compound Semiconductors, 9922 East Montgomery #7, Spokane, WA 99206, USA
G. Dallas
Affiliation:
Galaxy Compound Semiconductors, 9922 East Montgomery #7, Spokane, WA 99206, USA
W. D. Goodhue
Affiliation:
Photonics Center, Dept. of Physics, University of Massachusetts, Lowell, MA 01854
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Abstract

High-quality GaSb substrates with minimal surface roughness and thin, uniform oxide layers are critical for developing low-power, epitaxy-based, electronic and optoelectronic devices. Ion-beam processing techniques of gas-cluster ion beam (GCIB) and bromine ion-beam assisted etching (Br-IBAE) were investigated as to their potential for improving the suitability of substrate surfaces for molecular beam epitaxial (MBE) growth. Statistical analysis of the residual surface roughness provides insight into ion-beam processing and its impact on epitaxial growth. Images of episurfaces grown on chemical mechanical polished (CMP), Br-IBAE, and GCIB finished substrates were obtained using atomic force microscopy (AFM) and these were statistically analyzed to characterize their surface roughness properties. Autocorrelation analysis of the first two types of episurfaces showed a quick loss of correlation within ∼100 nm. The episurface with Br-IBAE also showed isotropic mound roughness with sharp point-like protrusions. The GCIB prepared episurfaces exhibited the formation of uniform step-terrace patterns with monatomic steps and wide terraces as indicated by the strong, long range (>0.5 μm) correlations. Statistical analysis of the GCIB episurfaces showed self-similar random fractal behavior over eight orders of magnitude in the power spectral density (PSD) with a fractal dimension of ∼2.5.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 829: Symposium B – Progress in Compound Semiconductor Materials IV – Electronic and Optoelectronic Applications , 2004 , B6.3
Copyright
Copyright © Materials Research Society 2005

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References

REFERENCES

1. Dutta, P.S., Bhatt, H.L. and Kumar, V., J. Appl. Phys., 81(9), 5821–5870 (1997)Google Scholar
2. Chung, S.J., Goldammer, K.J., Lindstrom, S.C., Johnson, M.B., and Santos, M.B., J. Vac. Sci. Technol. B, 17(3), 1151–1154 (1999)Google Scholar
3. Liu, Z.Y., Hawkins, B., and Keuch, T.F., J. Vac. Sci. Technol. B, 21(1), 71 (2003)Google Scholar
4. Li, X., Goodhue, W., Santeufemio, C., MacCrimmon, R., Allen, L.P., Krishnaswami, K., Bliss, D., Sung, C., Applied Surface Science, 218, 251–258 (2003)Google Scholar
5. Krishnaswami, K., Vangala, S.R., Zhu, B., Goodhue, W.D., Allen, L.P., Santeufemio, C., Liu, X., Ospina, M.C., Whitten, J., Sung, C., Dauplaise, H., Bliss, D., Dallas, G., Bakken, D., and Jones, K.S., J. Vac. Sci. Technol. B, 22(3), 1455–1459 (2004)Google Scholar
6. Krishnaswami, K., Vangala, S., Allen, L.P., Santeufemio, C., Bliss, D., Dauplaise, H., Ospina, M., Liu, X., Whitten, J., Sung, C., and Goodhue, W.D, Mat. Res. Symp. Proc., 792, 617–622 (2004)Google Scholar
7. Vangala, S., Krejca, B., Krishnaswami, K., Zhu, B., Vaccaro, K., Dauplaise, H., Bliss, D., and Goodhue, W.D., Mat. Res. Symp. Proc., 792, 569–574 (2004)Google Scholar
8. Krishnaswami, , Krejca, B., Vangala, S., Ospina, M.C., Sung, C., Allen, L.P., Santeufemio, C., Bliss, D., and Goodhue, W.D, Mat. Res. Symp. Proc., 786, 329–334 (2004)Google Scholar
9. Fenner, D.B., Mat. Res. Symp. Proc., 792, R9.32.1–R9.32.6 (2004)Google Scholar
10. Fenner, D.B., J. Appl. Phys., 95(10), 5408–5418 (2004)Google Scholar
11. Nosho, B.Z., Bennett, B.R., Aifer, E.H., and Goldberg, M., J. Crystal Growth, 236, 155–164 (2002)Google Scholar
12. Longenbach, K.F. and Wang, W.I., Appl. Phys. Lett., 59(19), 2427–2429 (1991)Google Scholar