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Room Temperature Photoluminescence Spectra of Annealed PECVD Silicon Nitride Thin Films

  • C. Savall (a1), E. Bustarret (a1), J. P. Stoquert (a2) and J. C. Bruyére (a1)

Abstract

We present the changes upon isochronous annealing in the room temperature photoluminescence (PL) spectra of nearly stoichiometric silicon nitride. Samples are prepared by the 50kHz PECVD of a N2/SiH4/Helium gas mixture at 350°C. In the as-deposited films the hydrogen content was around 11% for a refractive index of 1.98. For a photoexcitation at 351 nm, the polarized PL spectrum of the as-deposited film is characterized by a main broad emission band in the visible region with a maximum at 2.55eV. A second narrow peak (FWHM = 55meV), at 3.02eV is observed. We study the evolution of the PL spectra with different isochronous anneals from 350°C to 1000°C. Even though the general shape of the PL spectra does not change, we observe an increase of quantum efficiency with maximum value upon 750°C annealing. Beyond this temperature the low energy part of the PL spectrum shows a slight increase. These variations are compared to those of the infrared absorption peaks measured on the same samples. Both the temperature dependence of the intensity of a well defined absorption peak in the Si-H stretching mode region and that of the PL features can be explained assuming that solid state chemical reactions involving hydrogen and Si-Si bonds occur in the bulk of the alloy.

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Room Temperature Photoluminescence Spectra of Annealed PECVD Silicon Nitride Thin Films

  • C. Savall (a1), E. Bustarret (a1), J. P. Stoquert (a2) and J. C. Bruyére (a1)

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