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Room Temperature Electroluminescence From D1 Dislocation Centers In Silicon

Published online by Cambridge University Press:  15 February 2011

Einar Ö Sveinbjörnsson  and
Jörg Weber
Einar Ö Sveinbjörnsson
Affiliation:
Max-Planck-Institut für Festkörperforschung, Heisenbergstrasse 1, D-70569 Stuttgart, Germany
Jörg Weber
Affiliation:
Max-Planck-Institut für Festkörperforschung, Heisenbergstrasse 1, D-70569 Stuttgart, Germany
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Abstract

We report on electroluminescence at room temperature from forward biased n+-p silicon diodes containing high densities (108-109 cm−2) of dislocations at the junction interface. In addition to electroluminescence from band-to-band transitions, we observe a signal arising from the well known dislocation center Dl peaked at ∼1.6 μm (0.78 eV). The Dl electroluminescence intensity at room temperature increases linearly with current density with no observable saturation as long as sample heating is avoided. The quenching of the D l luminescence between 4 K and room temperature is highly sensitive to metal impurities which introduce competitive non-radiative recombination centers. The external power efficiency of the DI electroluminescence was estimated to be of the order of 10−6.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 442: Symposium E – Defects in Electronic Materials II , 1996 , 331
Copyright
Copyright © Materials Research Society 1997

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