Hostname: page-component-7479d7b7d-c9gpj Total loading time: 0 Render date: 2024-07-12T02:17:48.687Z Has data issue: false hasContentIssue false
  • English
  • Français

Room Temperature Deposition of Silicon Oxynitride Films with Low Stress Using Sputtering-Type Electron Cyclotron Resonance Plasmas

Published online by Cambridge University Press:  10 February 2011

D. Gao ,
K. Furukawa ,
H. Nakashima ,
J. Gao ,
J. Wang  and
K. Muraoka
D. Gao
Affiliation:
Advanced Science and Technology Center for Cooperative Research, Kyushu University, Kasuga, Fukuoka 816-8580, Japan, gao@astec.kyushu-u.ac.jp
K. Furukawa
Affiliation:
Advanced Science and Technology Center for Cooperative Research, Kyushu University, Kasuga, Fukuoka 816-8580, Japan, gao@astec.kyushu-u.ac.jp
H. Nakashima
Affiliation:
Advanced Science and Technology Center for Cooperative Research, Kyushu University, Kasuga, Fukuoka 816-8580, Japan, gao@astec.kyushu-u.ac.jp
J. Gao
Affiliation:
Interdisciplinary Graduate School of Engineering Science, Kyushu University, Kasuga, Fukuoka 816-8580, Japan
J. Wang
Affiliation:
Interdisciplinary Graduate School of Engineering Science, Kyushu University, Kasuga, Fukuoka 816-8580, Japan
K. Muraoka
Affiliation:
Interdisciplinary Graduate School of Engineering Science, Kyushu University, Kasuga, Fukuoka 816-8580, Japan
Get access

Abstract

Silicon oxynitride (SiOxNy) films with low stress were deposited successfully at room temperature using sputtering-type electron cyclotron resonance (ECR) plasmas. Films were deposited for a wide range of flow rate ratio of O2 to N2 at a constant Ar flow rate. Film properties were verified by characterizations of refractive index (ellipsometry), structural properties (Fourier transform infrared and Auger electron spectroscopy), intrinsic stress, and barrier strength of water penetration (thermal desorption spectroscopy). A near-stoichiometric SiOxNy (x = 1.44 and y = 0.41) film with low stress could be formed at the optimum deposition condition, under which the SiOxNy film had a refractive index of 1.54. The results of thermal desorption spectroscopy measurements showed that the SiOx Ny film had a higher barrier against moisture penetration relative to deposited SiOx and SiNy films. The SiOxNy film was directly deposited on the organic EL device and the applicability was shown clearly. These results indicate that this SiOxNy film deposited using a sputtering-type ECR plasma has the potential to be utilized as a passivation layer of organic EL devices, which are required to be formed at low temperature.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 594: Symposium V – Thin Films - Stresses & Mechanical Properties VIII , 1999 , 457
Copyright
Copyright © Materials Research Society 2000

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Yasui, K., Katoh, H., Fukuda, K. and Kaneda, S.: Trans. Inst. Electron. Inf Commun. Eng. J72–C–Il, p. 748 (1989).Google Scholar
2. Liao, W. S. and Lee, S. C., J. Electrochem. Soc. 114, p. 1477 (1997).Google Scholar
3. Fuyuki, T., Saitoh, T., and Matsunami, H., Jpn. J. Appl. Phys. 29, p. 2247 (1990).Google Scholar
4. Nakashima, H., Furukawa, K., Liu, Y. C., Gao, D. W., Kashiwazaki, Y., Muraoka, K., Shibata, K. and Tsurushima, T., J. Vac. Sci. & Technol. A 15, p. 1951 (1997).Google Scholar
5. Gao, D. W., Kashiwazaki, Y., Muraoka, K., Nakashima, H., Furukawa, K., Liu, Y. C., Shibata, K. and Tsurashima, T., J. Appl. Phys. 82, p. 5680 (1997).Google Scholar
6. Gao, D., Furukawa, K., Nakashima, H., Gao, J., Wang, J. and Muraoka, K., Jpn. J. Appl. Phys. 38, p. 4868 (1999).Google Scholar
7. Gao, D. W., Kashiwazaki, Y., Muraoka, K., Nakashima, H., Furukawa, K., Liu, Y. C. and Tsurashima, T.: Jpn. J. Appl. Phys. 36, p. 1692 (1997).Google Scholar
8. Smith, F. W. and Yin, Z., J. Non-Cryst. Solids 137–138, p. 871 (1991).Google Scholar