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Room Temperature Contactless Electromodulation Characterization of a Wafer-Sized InGaAs/GaAs/GaAlAs Grinsch Laser Structure

Published online by Cambridge University Press:  15 February 2011

Wojciech Krystek ,
M. Leibovitch ,
Fred H. Pollak ,
Godfrey Gumbs  and
T. Konopelski
Wojciech Krystek
Affiliation:
Physics Department and New York State Center for Advanced Technology in Ultrafast Photonic Materials and Applications;, Brooklyn College of the City University of New York;, Brooklyn, NY 11210; WOKBC@CUNYVM.CUNY.EDU
M. Leibovitch
Affiliation:
Physics Department and New York State Center for Advanced Technology in Ultrafast Photonic Materials and Applications;, Brooklyn College of the City University of New York;, Brooklyn, NY 11210; WOKBC@CUNYVM.CUNY.EDU
Fred H. Pollak
Affiliation:
Physics Department and New York State Center for Advanced Technology in Ultrafast Photonic Materials and Applications;, Brooklyn College of the City University of New York;, Brooklyn, NY 11210; WOKBC@CUNYVM.CUNY.EDU
Godfrey Gumbs
Affiliation:
Department of Physics and Astronomy;Hunter College of the City University of New York:, New York, NY 10021
T. Konopelski
Affiliation:
Semiconductor Laser International, Vestal, NY 13850
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Abstract

Using contactless electroreflectance at 300K we have characterized the complete potential profile of a pseudomorphic 0.98 μm InGaAs/GaAs/GaAlAs graded index of refraction separate confinement heterostructure laser fabricated by molecular beam epitaxy. Signals were detected from all three relevant portions of the sample. Comparison of the observed transitions from the InGaAs single quantum well (SQW) section with an envelope function calculation (including the effects of strain) made it possible to evaluate the In composition and width of SQW. These values were in good agreement with the intended parameters. The energy of 11H, the fundamental conduction to heavy-hole level (which is closely related to the lasing frequency) can easily be determined to less than ± 1 nm at 300K. From the period of the observed Franz-Keldysh oscillations from the graded GaAlAs region it was possible to directly evaluate the built-in electric field in the structure.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 406: Symposium L – Diagnostic Techniques for Semiconductor Materials Processing , 1995 , 241
Copyright
Copyright © Materials Research Society 1996

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References

1. Pollak, F. H. and Shen, H., Materials Science and Engineering, R10, 1993, p. 275–374 and references therein.Google Scholar
2. Glembocki, O. J. and Shanabrook, B. V., Semiconductors and Semimetals, 36, edited by Seiler, D.G. and Littler, C.L., Academic Press, New York, 1992, p. 222–292 and references therein.Google Scholar
3. Pollak, F.H. in Handbook on Semiconductors, 2, edited by Balkanski, M., North Holland, Amsterdam, 1994, pp. 527–635 and references therein.Google Scholar
4. Pollak, F.H., Qiang, H., Yan, D., Yin, Y. and Boccio, V.T., Photonics Spectra Magazine, 27, Issue 8, August 1993, p. 78–84.Google Scholar
5. Qiang, H., Yan, D., Yin, Y., , Y. and Pollak, F.H., Asia-Pacific Engineering Journal, Part A: Electrical Engineering, 3, p. 167–198 (1993).Google Scholar
6. Pollak, F.H., Qiang, H., Yan, D., Yin, Y., and Krystek, W., J. Metals, 46, p. 55–59 (1994).Google Scholar
7. Satzke, K., Vestner, H.G., Weiser, G., Goldstein, L. and Perales, A., J. Appl. Phys., 69, p. 7703–7710 (1991).Google Scholar
8. Boccio, V.T. and Pollak, F.H., private communication.Google Scholar
9. Moneger, S., Qiang, H., Pollak, F. H., Mathine, D.L., Droopad, R. and Maracas, G.N., to be published in Solid State Electronics.Google Scholar
10. Berger, P.D., Bru, C., Benyattou, T., Chenevas-Paule, A. and Grosse, P., Proc. SPIE 2397, p. 726 (1995).Google Scholar
11. Amirtharaj, P.M., this conference.Google Scholar
12. Chandler-Horowitz, D., Berning, D.W., Pellegrino, J.G., Burnett, J.H., Amirtharaj, P. M., Bour, D.P. and Treat, D.W., to be published in the Proceedings of the International Workshop on Semiconductor Characterization, NIST, Jan. 1995; also, this conference.Google Scholar
13. Krystek, W., Leibovitch, M., Pollak, F.H., Gray, M.L. and Hobson, W.S., to be published in the IEEE Journal of Selected Topics in Quantum Electronics: Applied Optical Diagnostics of Semiconductors.Google Scholar
14. Kuo, J.M., Chen, Y.K., Wu, M.C. and Chin, M.A., Appl. Phys. Lett., 59, p. 2781–2783 (1991).Google Scholar
15. Pollak, F.H. in Properties of Aluminium Gallium Arsenide, edited by Adachi, S., INSPEC, London, 1993, p. 53–57.Google Scholar
16. Bastard, G. and Brum, J.A., IEEE J. Quantum Electron., QE-22, p. 1625–1644 (1986).Google Scholar
17. Pan, S.H., Shen, H., Hang, Z., Pollak, F.H., Zhuang, W., Xu, Q., Roth, A.P., Masut, R., LeCelle, C., and Morris, D., Phys. Rev., B38, p. 3375–3382 (1988).Google Scholar
18. Adachi, S. in Properties of Aluminium Gallium Arsenide, edited by Adachi, S., INSPEC, London, 1993, p. 58–72.Google Scholar
19. Leibovitch, M., Kronik, L. and Shapira, Y., Phys. Rev., B50, p. 1739–1745 (1994).Google Scholar