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Role of The Gas Flow Parameters on The Uniformity of Films Produced by PECVD Technique

Published online by Cambridge University Press:  15 February 2011

R. Martins ,
A. Maçarico ,
I. Ferreira  and
E. Fortunato
R. Martins
Affiliation:
Department of Materials Science, FCT-UNL and Centre of Excellence for Microelectronics and Optoelectronic Processes, UNINOVA, Quinta da Torre, P-2825 Monte de Caparica, Portugal, rm@uninova.pt
A. Maçarico
Affiliation:
Department of Materials Science, FCT-UNL and Centre of Excellence for Microelectronics and Optoelectronic Processes, UNINOVA, Quinta da Torre, P-2825 Monte de Caparica, Portugal, rm@uninova.pt
I. Ferreira
Affiliation:
Department of Materials Science, FCT-UNL and Centre of Excellence for Microelectronics and Optoelectronic Processes, UNINOVA, Quinta da Torre, P-2825 Monte de Caparica, Portugal, rm@uninova.pt
E. Fortunato
Affiliation:
Department of Materials Science, FCT-UNL and Centre of Excellence for Microelectronics and Optoelectronic Processes, UNINOVA, Quinta da Torre, P-2825 Monte de Caparica, Portugal, rm@uninova.pt
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Abstract

The aim of this work is to present an analytical model able to interpret the experimental data of the dependence of film's uniformity on the discharge pressure, gas flow and temperature used during the production of thin films by the plasma enhancement chemical vapour deposition technique, under optimised electrode's geometry and electric field distribution. To do so, the gas flow is considered to be quasi-incompressible and inviscous leading to the establishment of the electro-fluid-mechanics equations able to interpret the film's uniformity over the substrate area, when the discharge process takes place in the low power regime.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 467: Symposium A – Amorphous and Microcrystalline Silicon Technology - 1997 , 1997 , 609
Copyright
Copyright © Materials Research Society 1997

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References

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