Hostname: page-component-5c6d5d7d68-qks25 Total loading time: 0 Render date: 2024-08-08T07:25:20.540Z Has data issue: false hasContentIssue false
  • English
  • Français

The Role of Substrate Surface Reactions in Heteroepitaxy of PbSe on BaF2

Published online by Cambridge University Press:  25 February 2011

Patrick J. McCann
Patrick J. McCann*
Affiliation:
School of Electrical Engineering and Computer Science, University of Oklahoma, Norman, OK 73019-0631
Get access

Abstract

A strong relationship between growth initiation temperature and resulting growth morphology has been observed in liquid phase epitaxy (LPE) of PbSe on BaF2. High quality epitaxial layers are consistently produced when growth is initiated between 600 and 660 degrees centigrade. This condition for epitaxy correlates with formation of a binary barium-selenide layer on the substrate surface resulting from a reaction between selenium and BaF2. This reaction, corraborated by visual observation and Auger electron spectroscopic (AES) analysis of the reaction product, occurs prior to PbSe layer growth when the substrate is exposed to selenium vapor as it is positioned under the growth solution. A barium-selenide reaction layer on a BaF2 substrate can catalyze nucleation by reducing deposit/substrate interface energy and or by increasing substrate surface energy. Such epitaxy-enabling substrate surface reactions can also occur during vapor deposition of IV-VI semiconductors on BaF2 substrates and may explain the widely observed epitaxial temperature phenomenon.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 221: Symposium C – Heteroepitaxy of Dissimilar Materials , 1991 , 289
Copyright
Copyright © Materials Research Society 1991

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Das, S. R., Cook, J. G., Phipps, M., and Boland, W. E, Thin Solid Films 181, 227 (1989).Google Scholar
2. Clemens, H., Fantner, E. J., Ruhs, W., and Bauer, G., J. Crystal Growth 66, 251 (1984).Google Scholar
3. Honke, D. K. and Kaiser, S. W., J. Appl. Phys. 45, 892 (1974).Google Scholar
4. Manasevit, H. M., Ruth, R. P., and Simpson, W. I., J. Crystal Growth 77, 468 (1986).Google Scholar
5. Manasevit, H. M. and Simpson, W. I., J. Electrochem Soc. 12, 444 (1975).Google Scholar
6. Gilman, J. J., J. Appl. Phys. 31, 2208 (1960).Google Scholar