Skip to main content Accessibility help
×
Home

Role of polarization in the photoluminescence of C- and M-plane oriented GaN/AlGaN multiple quantum wells

  • E. Kuokstis (a1), C. Q. Chen (a1), M. E. Gaevski (a1), W. H. Sun (a1), J. W. Yang (a1), G. Simin (a1), M. Asif Khan (a1), H. P. Maruska (a2), D. W. Hill (a2), M. M. C. Chou (a2), J. J. Gallagher (a2) and B. H. Chai (a2)...

Abstract

The comparative study of photoluminescence (PL) dynamics of wurtzite-type GaN/AlGaN multiple quantum wells (MQWs) fabricated using low-pressure metalorganic chemical vapor deposition technique over GaN coated [0001]-sapphire (C-plane) and single crystalline [1100]-oriented freestanding GaN (M-plane) substrates is presented. The MQWs on C-plane sapphire at low excitation exhibited much lower (∼30 times) PL intensity in comparison with M-plane samples. The C-plane MQWs showed a strong excitation intensity-induced PL spectrum line blueshift (up to 140 meV). Meanwhile identical MQW structures on M-plane substrates demonstrated no PL peak shifts indicating an absence of polarization fields. At higher excitation (>50 kW/cm2) the PL intensity and spectra peak positions for both the C- and the M-plane MQWs become nearly the same and do not differ with subsequent increase of pumping. Theoretical analysis and comparison with PL experimental data revealed strong (up to ∼1.2–1.3 MV/cm) built-in electrostatic fields in the C-plane structures whereas M-plane structures are almost non-polar.

Copyright

References

Hide All
1. Bernardini, F., Fiorentini, V., and Vanderbilt, D., Phys. Rev. B 56, R10024 (1997).
2. Im, J. S., Kollmer, H., Off, J., Sohmer, A., Scholz, F., and Hangleiter, A., Phys. Rev. B 57, R9435 (1998).
3. Vaschenko, G., Patel, D., Menoni, C. S., Gardner, N. F., Sun, J., Götz, W., Toné, C. N., and Clausen, B., Phys. Rev. B 64, 241308 (2001).
4. Northrup, J. E. and Neugebauer, J., Phys. Rev. B 53, R10477 (1996).
5. Cingolani, R., Botchkarev, A., Tang, H., and Markoç, H., Phys. Rev. B 61, 2711 (2000).
6. Palmer, D. W., www.semiconductors.co.uk, 2001.04.
7. Jain, S. C., Willander, M., Narayan, J., and Van Overstraeten, R., J. Appl. Phys. 87, 965 (2000).
8. Dmitriev, A. and Oruzheinikov, A., J. Appl. Phys. 86, 3241 (1999).
9. Weisbuch, C., Vinter, B., Quantum Semiconductor Structures, Academic Press, 1991.
10. Brinkman, W.F. and Rice, T.M., Phys. Rev. B, 7, 1508 (1973).
11. Ng, H. M., Appl. Phys. Lett. 80, 4369 (2002).

Role of polarization in the photoluminescence of C- and M-plane oriented GaN/AlGaN multiple quantum wells

  • E. Kuokstis (a1), C. Q. Chen (a1), M. E. Gaevski (a1), W. H. Sun (a1), J. W. Yang (a1), G. Simin (a1), M. Asif Khan (a1), H. P. Maruska (a2), D. W. Hill (a2), M. M. C. Chou (a2), J. J. Gallagher (a2) and B. H. Chai (a2)...

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed