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Role of Interface-States in the Reverse Bias Aging of Gaas Schottky Barriers

Published online by Cambridge University Press:  25 February 2011

K. A. Christianson
K. A. Christianson
Affiliation:
Electrical Engineering Department University of Maine, Orono, ME 04469
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Abstract

Forward bias capacitance has been used to examine the Au/W/GaAs and Au/Pt/Ti/GaAs Schottky barriers present in power microwave MESFET devices to see if interface-state generation plays any role in the previously reported reverse bias barrier height aging process. If a constant carrier capture cross-section is assumed, forward bias capacitance has shown that for samples strongly susceptible to aging (i.e. the Au/W/GaAs samples in this study) interface-state generation is taking place during the aging process. The validity of the constant capture cross section assumption has been tested by examining the I-V properties. For those samples whose reverse I-V properties were not dominated by thermionic-field emission, similar increases in interface-state densities were evaluated from the I-V characteristics for the degraded samples.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 181: Symposium B – Advanced Metallizations in Microelectronics , 1990 , 283
Copyright
Copyright © Materials Research Society 1990

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References

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