Skip to main content Accessibility help
×
Home

The Role of Impurities in Hydride Vapor Phase Epitaxially Grown Gallium Nitride

  • R. J. Molnar (a1), K. B. Nichols (a1), P. Maki (a1), E. R. Brown (a1) and I. Melngailis (a1)...

Abstract

Gallium nitride (GaN) films grown by hydride vapor phase epitaxy on a variety of substrates have been investigated to study what role silicon and oxygen impurities play in determining the residual donor levels found in these films. Secondary ion mass spectroscopy analysis has been performed on these films and impurity levels have been normalized to ion implanted calibration standards. While oxygen appears to be a predominate impurity in all of the films, in many of them the sum of silicon and oxygen levels is insufficient to account for the donor concentration determined by Hall measurements. This suggests that either another impurity or a native defect is at least partly responsible for the autodoping of GaN. Additionally, the variation of impurity and carrier concentration with surface orientation and/or nucleation density suggests either a crystallographic or defect-related incorporation mechanism.

Copyright

References

Hide All
1 Detchprohm, T., Hiramatsu, K., Amano, H. and Akasaki, I., Appl. Phys Lett. 61, 2688 (1992).
2 Maruska, H.P. and Tietjen, J.J., Appl. Phys. Lett. 15, 327 (1969).
3 Seifert, W., Franzheld, R., Butter, E., Sobotta, H. and Riede, V., Cryst. Res. Technol. 18, 383 (1983).
4 Neugebauer, J. and Van de Walle, C.G., Phys. Rev. B 50, 8067 (1994).
5 Baranov, B., Däweritz, L., Gutan, V.B., Jungk, G., Neumann, H. and Raidt, H., Phys. Status Solid. A 49, 629 (1978).
6 Ilegems, M. and Montgomery, H.C., J. Phys. Chem. Solids 34, 885 (1973).
7 Chung, B.C. and Gershenzon, M., J. Appl. Phys. 72, 651 (1992).
8 Sasaki, T., J. Cryst. Growth 129, 81 (1993).
9 Naniwae, K., Itoh, S., Amano, H., Itoh, K., Hiramatsu, K. and Akasaki, I., J. Cryst. Growth 99, 381 (1990).
10 Hwang, J.S., Kuznetsov, A.V., Lee, S.S., Kim, H.S., Choi, J.G. and Chong, P.J., J. Cryst. Growth 142, 5 (1994).
11 Work was performed at Charles Evans and Associates, West, Job # 47916.
12 Molnar, R. J., Singh, R. and Moustakas, T.D., J. Electron. Mater. 24, 275 (1995).
13 Molnar, R.J. and Moustakas, T.D., J. Appl. Phys. 76, 4587 (1994).

The Role of Impurities in Hydride Vapor Phase Epitaxially Grown Gallium Nitride

  • R. J. Molnar (a1), K. B. Nichols (a1), P. Maki (a1), E. R. Brown (a1) and I. Melngailis (a1)...

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed