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The Role of Implant Temperature in the Formation of Thin Buried Oxide Layers

Published online by Cambridge University Press:  28 February 2011

Alice E. White ,
K. T. Short ,
L. N. Pfeiffer ,
K. W. West  and
J. L. Batstone
Alice E. White
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
K. T. Short
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
L. N. Pfeiffer
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
K. W. West
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
J. L. Batstone
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
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Abstract

From the early work on high dose oxygen implantation for buried SiO2 formation, it is apparent that the temperature of the Si substrate during the implant has a strong influence on the quality of both the SiO2 layer and the overlying Si. This, in turn, can be related to the damage from the oxygen implant. For substrate temperatures < ∼ 300°C, amorphous Si is created during the implant and leads to the formation of twins or polycrystalline Si during the subsequent high temperature (>1300°C) anneal. At higher substrate temperatures (<∼400°C), dynamic annealing eliminates the amorphous Si, but the implanted oxygen appears to segregate during the implant leading to oxygen-rich amorphous regions imbedded in regions of crystalline material. As the amorphous regions start to coalesce and form SiO2 during the high temperature anneal, they trap crystalline Si which cannot escape by diffusion. This process can be circumvented by using a randomizing Si implant to change the damage structure from the oxygen implant before annealing. We have seen these effects clearly in sub-stoichiometric implants, and believe they are also operative during stoichiometric implants.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 74: Symposium A – Beam-Solid Interactions and Transient Processes , 1986 , 585
Copyright
Copyright © Materials Research Society 1987

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References

[1] Hemment, P. L. F. in Mater. Res. Soc. Symp. Proc. 53, 207 (1986) and references therein.CrossRefGoogle Scholar
[2] Alice White, E., Short, K. T., Batstone, J. L., Jacobson, D. C., Poate, J. M., and West, K. W., Appl. Phys. Lett. 50, 5 Jan. 1987.Google Scholar
[3] Dearnaley, G., Freeman, J. H., Nelson, R. S., and Stephen, J., ”Ion Implantation”, (North-Holland, New York, 1973).Google Scholar
[4] Celler, G. K., Hemment, P. L. F., West, K. W., and Gibson, J. M., Appl. Phys. Lett. 48, 532 (1986).Google Scholar
[5] Elliman, R. G., Williams, J. S., Johnson, S. T., and Nygren, E. N., these proceedings.Google Scholar
[6] Linnros, J., Elliman, R. G., and Brown, W. L., these proceedings.Google Scholar
[7] Batstone, J. L., White, Alice E., Short, K. T., and Gibson, J. M, these proceedings.Google Scholar
[8] Tomoyasu Inoue and Toshio Yoshii, Appl. Phys. Lett. 86, 64 (1980); S. S.Lau, S. Matteson, J. W. Mayer, P. Revesz, J. Gyulai, J. Roth, T. W. Sigmon, and T. Cass, Appl. Phys. Lett. 34, 76 (1980).Google Scholar
[9] Short, K. T. and , Alice E. White; submitted for publication.Google Scholar