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The Role of H-Plasma in Aluminum Induced Crystallization of Amorphous Silicon

  • Chong Luo (a1), Juan Li (a1), He Li (a1) (a2), Zhiguo Meng (a1), Qian Huang (a1), Shengzhi Xu (a1), Hoi Sing Kwok (a2) and Shaozhen Xiong (a1)...

Abstract

A technique to improve and accelerate aluminum induced crystallization (AIC) by hydrogen plasma is proposed in this paper. Raman spectroscopy and Secondary Ion Mass Spectrometry of crystallized poly-Si thin films show that hydrogen plasma radicals reduce the crystallization time of AIC. This technique shortens the annealing time from 10 hours to 4 hours and increases the Hall mobility from 22.1 cm2/V·s to 42.5 cm2/V·s. The possible mechanism of AIC assisted by hydrogen radicals will also be discussed.

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Corresponding author e-mail: xiongsz@nankai.edu.cn

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