Hostname: page-component-76fb5796d-skm99 Total loading time: 0 Render date: 2024-04-26T12:17:08.292Z Has data issue: false hasContentIssue false
  • English
  • Français

The Role of Charged Point Defects on the Diffusion Behavior of Silicon in GaAs

Published online by Cambridge University Press:  25 February 2011

Jeffrey J. Murray ,
Michael D. Deal  and
David A. Stevenson
Jeffrey J. Murray
Affiliation:
Department of Materials Science and Engineering Stanford University, Stanford CA 94305
Michael D. Deal
Affiliation:
Center For Integrated Systems Stanford University, Stanford CA 94305
David A. Stevenson
Affiliation:
Department of Materials Science and Engineering Stanford University, Stanford CA 94305
Get access

Abstract

A multilayered Si doped MBE structure was used to study the effective diffusivity of Si and the results are modeled with an (n/ni)2 dependence over the temperature range of 750°C – 950°C. An activation energy, Ea′, of 4.0 eV is obtained which is higher than normally reported in the literature. This higher Ea′ value results from appropriate accounting of the temperature dependence of ni, which is often neglected in the expression for Deff. Si diffusion at a buried n+/n++junction of a MOCVD grown structure also follows an (n/ni)2 dependence. These results support a Fermi-level model of Si diffusion in GaAs and suggest that the local point defect chemistry of the GaAs, through Si doping, is responsible for this diffusion behavior, regardless of the proximity to the surface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 163: Symposium G – Impurities, Defects and Diffusion in Semiconductors: Bulk and Layered Structures , 1989 , 691
Copyright
Copyright © Materials Research Society 1990

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Deppe, D. G., Holonyak, N. Jr., Kish, F. A., and Baker, J. E., Appl. Phys. Lett. 50 , 998 (1987).Google Scholar
2 Deppe, D. G., Holonyak, N. Jr., and Baker, J. E., Appl. Phys. Lett. 52, 129 (1988).Google Scholar
3 Tan, T. Y. and Gösele, U. M., Mater. Science and Eng. B1, 47, (1988).Google Scholar
4 Yu, S., Gösele, U. M. and Tan, T. Y., J. Appl. Phys. 66, 2952 (1989).Google Scholar
5 Mei, P., Yoon, H.W., Venkatesan, T., Schwarz, S. A., and Harbison, J. P., Appl. Phys. Lett. 50, 1823 (1987).Google Scholar
6 Greiner, M.E. and Gibbons, J.F., Appl. Phys. Lett. 44, 705 (1984).Google Scholar
7 Lee, K. H., Park, H.-H., and Stevenson, D. A., J. Appl. Phys. 65, 1048 (1989).Google Scholar
8 Kavanagh, K. L., Mayer, J. W., Magee, C. W., Sheets, J., Tong, J. and Woodall, J. M., Appl. Phys. Lett. 47, 1208 (1985).Google Scholar
9 Deal, M.D., Hansen, S.E. and Sigmon, T.W., IEEE Trans. Computer-Aided Design 8, 939 (1989).Google Scholar
10 S.Blakemore, J., J. Appl. Phys. 53, 520 (1982).Google Scholar
11 Schubert, E. F., Stark, J. B., Chiu, T.H. and Tell, B., Appl. Phys. Lett. 53, 293 (1988).Google Scholar
12 Murray, J.J., Stevenson, D.A. and Deal, M.D. accepted for publication (Nov. 1989) in Appl. Phys. Lett.Google Scholar
13 Tuck, B., Introduction To Diffusion in Semiconductors, (Pereginus, Stevenage, 1974), p. 140.Google Scholar