Skip to main content Accessibility help
×
Home

The Role of Charged Defects In Current Transport Through Hydrogenated Amorphous Silicon Alloys

  • S.P. Lau (a1), J.M. Shannon (a1), B.J. Sealy (a1) and J.M. Marshall (a2)

Abstract

Current transport in metal-semiconductor-metal structures based on amorphous silicon alloys has been studied in relation to the density of dangling bond state defects. The density of defects was changed by varying alloy composition or by current stressing. We show that the change of current-voltage characteristics and activation energy with defect density and the onset of Poole-Frenkel conduction with composition require charged defects. It is found that there are more charged defects in amorphous silicon nitride (a-Si1−xNx:H) than in amorphous silicon carbide (a-Si1−xCx:H). In addition, an excess of negatively charged dangling bond defects compared to positively charged dangling bond defects is observed in a-Si1−xNx:H films. This is attributed to the presence of N4 + act as the donor states in silicon nitride. We find that the density of charged dangling bond defects can be higher than 1019cm−3.

Copyright

References

Hide All
1 Alder, D., Solar Cells 9, 113 (1983).
2 Staebler, D.L. and Wronski, C.R., Appl. Phys. Lett. 31, 292 (1977).
3 Shimizu, T., Kidoh, H., Morimoto, A. and Kumeda, M., Jap. J. of Appl. Phys. 28, 586 (1989).
4 Deane, S.C. and Powell, M.J., Phys. Rev. B 48, 10815 (1993).
5 Powell, M.J. and Deane, S.C., Phys. Rev. B 53, 10121 (1996).
6 Schumm, G., Lotter, E. and Bauer, G.H., Appl. Phys. Lett. 60, 3262 (1992).
7 Jiao, J., Liu, H., Semoushikina, S., Lee, Y. and Wronski, C.R., Appl. Phys. Lett. 69, 3713 (1996).
8 Shimizu, T., Ishii, T., Kumeda, M., Masuda, A., J. of Non-Cryst. Solids, in press (1998).
9 Shannon, J.M. and Annis, A.D., Phil. Mag. Lett. 72, 323 (1995).
10 Shannon, J.M., Lau, S.P., Annis, A.D. and Sealy, B.J., Solid State Electronics 42, 91 (1998).
11 Shannon, J.M., Deane, S.C., McGarvey, B. and Sandoe, J.N., Appl. Phys. Lett. 65, 2978 (1994).
12 Masuda, A., Itoh, K., Kumeda, M. and Shimizu, T., J. of Non-Cryst. Solids 198–200, 395 (1996).
13 Fritzsche, H. and Nakayama, Y., Philos. Mag. B69, 359 (1994).
14 McGarvey, B., Clegg, J.B., Deane, S.C., Sandoe, J.N. and Shannon, J.M., Mater. Res. Soc. Proc. 467, 955 (1997).
15 Frenkel, J., Phys. Rev. 54, 647 (1938).
16 Hill, R.M., Thin Solid Films 8, R21 (1971).
17 Lau, S.P., Shannon, J.M. and Sealy, B.J., J. Non-Cryst. Solids, in press (1998).

The Role of Charged Defects In Current Transport Through Hydrogenated Amorphous Silicon Alloys

  • S.P. Lau (a1), J.M. Shannon (a1), B.J. Sealy (a1) and J.M. Marshall (a2)

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed