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The Role of Atomic Hydrogen for Substrate Cleaning for Growth of CdTe Buffer Layers at Reduced Temperatures on Silicon, CdTe, and HgCdTe

Published online by Cambridge University Press:  10 February 2011

L. S. Hirsch ,
Zhonghai Yu ,
M. R. Richards-Babb  and
T. H. Myers
L. S. Hirsch
Affiliation:
Physics Department, West Virginia University, Morgantown, WV 26506
Zhonghai Yu
Affiliation:
Physics Department, West Virginia University, Morgantown, WV 26506
M. R. Richards-Babb
Affiliation:
Chemistry Department, West Virginia University, Morgantown, WV 26506
T. H. Myers
Affiliation:
Physics Department, West Virginia University, Morgantown, WV 26506, tmyers@wvu.edu
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Abstract

Atomic hydrogen is shown to be efficacious for cleaning CdTe and HgCdTe substrates for subsequent CdTe growth by molecular beam epitaxy. While single crystal ZnTe and CdTe growth was obtained on Si substrates that underwent an ex-situ HF-based etch, only polycrystalline CdTe or ZnTe could be obtained on surfaces cleaned using an atomic hydrogen source. This result is possibly related to gas-phase transport of Te to the Si surface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 450: Symposium O – Infrared Applications of Semiconductors , 1996 , 263
Copyright
Copyright © Materials Research Society 1997

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References

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