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Rie-Induced Damage to Single Crystal Silicon Monitored with Nondestructive Thermal Waves

Published online by Cambridge University Press:  28 February 2011

Patrice Geraghty  and
W. Lee Smith
Patrice Geraghty
Affiliation:
Advanced Micro Devices, VLSI Technology Development, 915 DeGuigne Ave., Sunnyvale, CA 94088
W. Lee Smith
Affiliation:
Therma-Wave, Inc., 47734 Westinghouse Dr., Fremont, CA 94539
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Abstract

A method is presented to nondestructively monitor damage in silicon caused by reactive-ion or plasma etching on actual product wafers or test wafers immediately following the etch step.Data is taken on product wafers by scanning the 1-micron laser probe spot across and along the bottom of RIE-etched trenches.The onset of silicon damage brings a marked increase to the thermal wave (TW) signal: as the RIE bias voltage was increased from -60 volts to -250 volts, the TW signal increased monotonically by 1230%.The effects of other RIE process parameters on the damage level were also measured.This study allowed the RIE process variables to be adjusted to minimize damage to the silicon surface.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 68: Symposium C – Plasma Processing , 1986 , 387
Copyright
Copyright © Materials Research Society 1986

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