Hostname: page-component-77c89778f8-m42fx Total loading time: 0 Render date: 2024-07-18T23:43:05.289Z Has data issue: false hasContentIssue false

Reversible Luminescence Quenching of Porous Si by Solvents

Published online by Cambridge University Press:  15 February 2011

Jeffrey M. Lauerhaas
Affiliation:
Department of Chemistry, The University of California at San Diego, La Jolla, CA 92093-0506
Grace M. Credo
Affiliation:
Department of Chemistry, The University of California at San Diego, La Jolla, CA 92093-0506
Julie L. Heinrich
Affiliation:
Department of Chemistry, The University of California at San Diego, La Jolla, CA 92093-0506
Michael J. Sailor
Affiliation:
Department of Chemistry, The University of California at San Diego, La Jolla, CA 92093-0506
Get access

Abstract

Interaction of the solvents tetrahydrofuran, diethyl ether, methylene chloride, toluene, o-xylene, benzene, and methanol with luminescent porous n- Si (PS) results in reversible quenching of the luminescence associated with this material. The degree of quenching ranges from 99% – 50%, and scales with solvent dipole moment. Reaction with gaseous Cl2, Br2, or I2 results in irreversible quenching, associated with a surface reaction that removes Si-H bonds. Total luminescence quenching is observed on treatment of a PS wafer with a solution of the electron donor ferrocene in toluene, suggesting that charge transfer quenching may also be operative in this material. Luminescence is partially recovered by rinsing the PS in pure toluene. The data show that photoluminescence of PS is highly sensitive to surface adsorbates, suggesting that carrier trapping is easily induced in this material.

Type
Research Article
Copyright
Copyright © Materials Research Society 1992

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

(1) Canham, L. T. Appl. Phys. Lett. 1990, 57, 10461048.Google Scholar
(2) Lehmann, V.; Gosele, U. Appl. Phys. Lett. 1990,58, 856858.Google Scholar
(3) Bsiesy, A.; Vial, J. C.; Gaspard, F.; Herino, R.; Ligeon, M.; Muller, F.; Romestain, R.; Wasiela, A.; Halimaoui, A.; Bomchil, G. Surf. Sci. 1991, 254, 195200.CrossRefGoogle Scholar
(4) Canham, L. T.; Houlton, M. R.; Leong, W. Y.; Pickering, C.; Keen, J. M. J. Appl. Phys. 1991, 70, 422430.Google Scholar
(5) Shriver, D. F.; Drezdzon, M. A. The Manipulation of Air-Sensitive Compounds; John Wiley & Sons: New York, 1986; pp 1340.Google Scholar
(6) Shriver, D. F.; Drezdzon, M. A. The Manipulation of Air-Sensitive Compounds; John Wiley & Sons: New York, 1986; pp 8492.Google Scholar
(7) Ito, T.; Kiyama, H.; Yasumatsu, T.; Watabe, H.; Hiraki, A. Physica B 1991, 170, 535539.Google Scholar
(8) Gupta, P.; Colvin, V. L.; George, S. M. Phys. Rev. B 1988,37, 82348243.Google Scholar
(9) Dannhauser, T.; O'Neil, M.; Johansson, K.; Whitten, D.; McLendon, G. J. Phys. Chem. 1986, 90, 60746076.Google Scholar
(10) Meyer, G. J.; Lisensky, G. C.; Ellis, A. B. J. Am. Chem. Soc. 1988, 110, 49144918.CrossRefGoogle Scholar
(11) CRC Handbook of Chemistry and Physics; CRC Press: Boca Raton, 1990; pp 9.69.9.Google Scholar