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Resistometric Mapping using a Scanning Tunneling Microscope

Published online by Cambridge University Press:  10 February 2011

C I Lang  and
J Tapson
C I Lang
Affiliation:
Department of Materials Engineering, University of Cape Town, Private Bag, Rondebosch, 7700South Africa, clang@engfac.uct.ac.za
J Tapson
Affiliation:
Department of Electrical Engineering, University of Cape Town, Private Bag, Rondebosch, 7700South Africa, jtapson@eleceng.uct.ac.za
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Abstract

We present a method whereby spatial variations in the resistivity of bulk conductive specimens may be detected on the same scale as the microstructural variations from which they arise. This technique, a new development of scanning tunneling potentiometry, offers significant benefits for microstructural characterization and for investigation of microstructure/resistivity relationships in metallic materials.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 500: Symposium EE – Electrically Based Microstructural Characterization II , 1997 , 15
Copyright
Copyright © Materials Research Society 1998

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References

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