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Resistivity Differences in C49 Tisi2 Films Formeid by Rapid Thermal Processing

Published online by Cambridge University Press:  28 February 2011

A.H. Reader ,
A.H. Van Ommen  and
H.J.W. Van Houium
A.H. Reader
Affiliation:
Philips Research Laboratories, P.O. Box 80.000, 5600 JA Eindhoven, The Netherlands
A.H. Van Ommen
Affiliation:
Philips Research Laboratories, P.O. Box 80.000, 5600 JA Eindhoven, The Netherlands
H.J.W. Van Houium
Affiliation:
Philips Research Laboratories, P.O. Box 80.000, 5600 JA Eindhoven, The Netherlands
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Abstract

TiSi2 films produced from co-sputtered Ti/Si mixtures by rapid thermal processing at temperatures around 630°C were found to have a higher resistivity than films formed by the solid state reaction of deposited Ti with (100) silicon during asimilar anneal. Diffraction studies indicated the films comprised of the C49 phase only. It is argued that the resistivity difference arises from the extremely high (3106cm−1) stacking fault density in the annealed co-sputtered layers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 92: Symposium B – Rapid Thermal Processing of Electronic Materials , 1987 , 177
Copyright
Copyright © Materials Research Society 1987

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References

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