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Resistivity and Carrier Mobilities in Heavily Doped Polycrystalline Silicon Thin Films

  • Dae M. Kim (a1), Feng Qian (a1), Charles U. Bickford (a2) and Simon Yu (a2)

Abstract

Electrical conduction data from heavily n and p-doped polysilicon thin films are presented. The sheet resistance in the range from 1 kΩ/□ to 100 Ω/□ is characterized over temperatures from 20°K to 450°K. It is shown that the polysilicon resistivity, larger than the corresponding crystalline value by a factor∼ 10 in the same doping range, is temperature insensitive. This larger resistivity is correlated to the degree of dopant activation and the mobility. The measured mobility varying from 8 to 20 cm 2/V.s is smaller than the corresponding crystalline value by a factor 10 ∼ 3.

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