Hostname: page-component-848d4c4894-xfwgj Total loading time: 0 Render date: 2024-06-19T23:30:06.099Z Has data issue: false hasContentIssue false
  • English
  • Français

Resistivity and Carrier Mobilities in Heavily Doped Polycrystalline Silicon Thin Films

Published online by Cambridge University Press:  22 February 2011

Dae M. Kim ,
Feng Qian ,
Charles U. Bickford  and
Simon Yu
Dae M. Kim
Affiliation:
Department of Applied Physics and Electrical Engineering, Oregon Graduate Center, 19600 N.W. Von Neumann Drive, Beaverton, OR 97006
Feng Qian
Affiliation:
Department of Applied Physics and Electrical Engineering, Oregon Graduate Center, 19600 N.W. Von Neumann Drive, Beaverton, OR 97006
Charles U. Bickford
Affiliation:
Tektronix Laboratories, Tektronix Inc., P.O. Box 500, Beaverton, OR 97077
Simon Yu
Affiliation:
Tektronix Laboratories, Tektronix Inc., P.O. Box 500, Beaverton, OR 97077
Get access

Abstract

Electrical conduction data from heavily n and p-doped polysilicon thin films are presented. The sheet resistance in the range from 1 kΩ/□ to 100 Ω/□ is characterized over temperatures from 20°K to 450°K. It is shown that the polysilicon resistivity, larger than the corresponding crystalline value by a factor∼ 10 in the same doping range, is temperature insensitive. This larger resistivity is correlated to the degree of dopant activation and the mobility. The measured mobility varying from 8 to 20 cm 2/V.s is smaller than the corresponding crystalline value by a factor 10 ∼ 3.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 106: Symposium G – Polysilicon Films and Interfaces , 1987 , 261
Copyright
Copyright © Materials Research Society 1988

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Graul, J., Glasi, A., and Murrmann, H., IEEE J. Solid-State Circuits, vol. SC–11, pp. 491–495, 1976.Google Scholar
2. Ning, T. H. and Issac, R. D., IEEE Trans. Electron Devices, vol. ED-27, No. 11, pp. 2051–2055, 1980.Google Scholar
3. Ning, T. H., Issac, R. D., Solomon, P. M., Tang, D. D., Yu, H. N., Feth, G. C., and Wiedmann, S. K., IEEE Trans. Electron Devices, vol. ED-28, No. 9, pp. 1010–1013, 1981.CrossRefGoogle Scholar
4. Yu, Z., Ricco, B., and Dutton, W., IEEE Trans. Electron Devices, vol. ED-31, No. 6, pp. 773–784, 1984.Google Scholar
5. Kim, D. M., Qian, F., Bickford, C. U., and Park, H. K., IEEE Trans. Electron Devices, vol. ED-34, No. 8, pp. 1774–1780, 1987.Google Scholar
6. Kim, D. M., Khondker, A. N., Ahmed, S. S., and Shah, R. R., IEEE Trans. Electron Devices, vol. ED-31, pp. 480–493, 1984.CrossRefGoogle Scholar
7. Chandrasekhar, S., Rev. Mod. Phys., vol.15, No. 1, pp. 1–89, 1943.CrossRefGoogle Scholar