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Reproducible Resistance Switching in Ni/NiO/Ni Trilayer

  • Hisashi Shima (a1), Fumiyoshi Takano (a2), Hiro Akinaga (a3), Isao H Inoue (a4) and Hidenori Takagi (a5)...

Abstract

The resistance random access memory is attracting much attention as a high-density and high-speed non-volatile memory, having large resistance switching ration and good affinity with the conventional CMOS technologies. We demonstrate the resistance switching in the NiO thin film without using Pt electrode.

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Keywords

Reproducible Resistance Switching in Ni/NiO/Ni Trilayer

  • Hisashi Shima (a1), Fumiyoshi Takano (a2), Hiro Akinaga (a3), Isao H Inoue (a4) and Hidenori Takagi (a5)...

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