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Reordering and Crystallization of Silicon Carbide Amorphized by Neutron Irradiation

Published online by Cambridge University Press:  21 March 2011

Lance L. Snead  and
Martin Balden
Lance L. Snead
Affiliation:
Metals and Ceramics Division, ORNL Building 4508 Oak Ridge, TN 37831-6087, USA
Martin Balden
Affiliation:
Max-Planck-Institut für Plasmaphysik Boltzmannstrasse 2 D-85748 Garching bei Munchen, Germany
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Abstract

Densification and crystallization kinetics of bulk SiC amorphized by neutron irradiation is studied. The temperature of crystallization onset of this highly pure, fully amorphous bulk SiC was found to be between 875-885°C and crystallization is nearly complete by 950°C. In-situ TEM imaging confirms the onset of crystallization, though thin-film effects apparently alter the kinetics of crystallization above this temperature. It requires >1125°C for complete crystallization of the TEM foil. Annealing at temperatures between the irradiation and crystallization onset temperature is seen to cause significant densification attributed to a relaxation, or reordering, of the as-amorphized structure.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 650: Symposium R – Microstructural Processes in Irradiated Materials-2000 , 2000 , R5.1
Copyright
Copyright © Materials Research Society 2001

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References

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