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Removing the Barriers to Next Generation'S Dielectric Films: In Situ Void-Free Planarized Films

Published online by Cambridge University Press:  25 February 2011

J.R. Monkowski ,
M.A. Logan  and
L.F. Wright
J.R. Monkowski
Affiliation:
Lam Research Corporation, 4650 Cushing Parkway, Fremont, CA 94538
M.A. Logan
Affiliation:
Lam Research Corporation, 4650 Cushing Parkway, Fremont, CA 94538
L.F. Wright
Affiliation:
Lam Research Corporation, 4650 Cushing Parkway, Fremont, CA 94538
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Abstract

In the next generation of semiconductor devices, minimum dimensions will be smaller, aspect ratios (height to width) of devices features will be larger, and BPSG dielectrics will be challenged to deal with these changes. A new process, which integrates deposition, flow, and anneal of BPSG films, and allows void-free filling of high-aspect-ratio trenches with excellent surface planarization, is presented in this paper. Scanning electron micrographs are used to show the extent of film coverage and planarization. Additional characterization includes ion chromatography, ellipsometry, stress measurements, and breakdown field measurements.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 203: Symposium D – Electronic Packaging Materials Science V , 1990 , 221
Copyright
Copyright © Materials Research Society 1991

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References

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