Hostname: page-component-76fb5796d-vfjqv Total loading time: 0 Render date: 2024-04-25T16:02:57.868Z Has data issue: false hasContentIssue false
  • English
  • Français

Removal Rate, Uniformity and Defectivity Studies of Chemical Mechanical Polishing of BPSG Films

Published online by Cambridge University Press:  14 March 2011

Benjamin A. Bonner ,
Boris Fishkin ,
Jeffrey David ,
Chad Garretson  and
Thomas H. Osterheld
Benjamin A. Bonner
Affiliation:
CMP Division, Applied Materials 3111 Coronado Drive, Santa Clara, CA 95054
Boris Fishkin
Affiliation:
CMP Division, Applied Materials 3111 Coronado Drive, Santa Clara, CA 95054
Jeffrey David
Affiliation:
CMP Division, Applied Materials 3111 Coronado Drive, Santa Clara, CA 95054
Chad Garretson
Affiliation:
CMP Division, Applied Materials 3111 Coronado Drive, Santa Clara, CA 95054
Thomas H. Osterheld
Affiliation:
CMP Division, Applied Materials 3111 Coronado Drive, Santa Clara, CA 95054
Get access

Abstract

Wafers where deposited with BPSG films having phosphorus concentration varying from 3.65 to 6.25% and boron concentration varying from 4 to 5.7%. These wafers were polished using CMP and the rates were found to depend on dopant concentrations. A fit to the data indicated that removal rates were more than 3 times as sensitive to boron concentration compared to phosphorus concentration. For a constant phosphorus concentration of 5%, each percent increase in boron increases CMP removal rate by 340 Å/min. For a constant boron concentration of 5%, each percent increase in phosphorus increases CMP removal rate by 96 Å/min.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 613: Symposium E – Chemical-Mechanical Polishing 2000 - Fundamentals… , 2000 , E8.6.1
Copyright
Copyright © Materials Research Society 2000

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1 Fang, S. J., Garza, S., Guo, H. et al. , “Optimization of the Chemical Mechanical Polishing Process for Premetal Dielectrices,” Journal of the Electrochemical Society 147 (2), 682 (2000).10.1149/1.1393253Google Scholar
2 Ni, C.-T., Chen, H. C., Huang, D. et al. , “A Study of CMP Slurry Chemistry Effect on BPSG Film for Advanced DRAM Application,” presented at the Proceedings of Third International Chemical-Mechanical Planarization for the ULSI Multilevel Interconnection Conference (CMP-MIC), Santa Clara, CA, 1998 (unpublished).Google Scholar
3 Steigerwald, Joseph M., Murarka, Shyam P., and Gutmann, Ronald J., Chemical Mechanical Planarization of Microelectronic Materials, 1 ed. (John Wiley & Sons, Inc., New York, 1997).10.1002/9783527617746Google Scholar
4 Yoshimaru, M. and Wakamatsu, H., “Microcrystal Growth on Borophosphosilicate Glass Film during High-Temperature Annealing,” Journal of the Electrochemical Society 143 (2), 666 (1996).10.1149/1.1836497Google Scholar
5 Schaffer, W.J., Westphal, J. W., Fry, H. W., et al. , “CMP Removal Rate and Nonuniformity of BPSG,” presented at the Proceedings of First International Chemical-Mechanical Planarization for the ULSI Multilevel Interconnection Conference (CMP-MIC), Santa Clara, CA, 1996 (unpublished).Google Scholar
6 Pennington, S. and Luce, S., Proc. 9th VMIC 9 (92), 168 (1992).Google Scholar
7 Sun, S. C., Yeh, F. L., and Tien, H. Z., Mat. Res. Soc. Symp. Proc. 337, 139 (1994).10.1557/PROC-337-139Google Scholar