Hostname: page-component-76fb5796d-x4r87 Total loading time: 0 Render date: 2024-04-26T14:47:19.325Z Has data issue: false hasContentIssue false
  • English
  • Français

Removal of End-of-Range Ion Implantation Defects in Silicon by Near Noble and Refractory Silicide Formation

Published online by Cambridge University Press:  21 February 2011

W. Lur ,
J. Y. Cheng  and
L. J. Chen
W. Lur
Affiliation:
Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan, Republic of China
J. Y. Cheng
Affiliation:
Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan, Republic of China
L. J. Chen
Affiliation:
Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan, Republic of China
Get access

Abstract

Complete removal of end-of-range (EOR) defects in ion implanted silicon has been achieved by the formation and growth of near noble silicides (CoSi 2 and NiSi 2 ) and refractory silicides (MoSi 2 and WSi2). Continued generation of vacancies during the silicide growth was found to be essential to reduce EOR defects. The results are consistent with the suggestion of the presence of a vacancy diffusion barrier near the EOR defects

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 147: Symposium C – Ion Beam Processing of Advanced Electronic Materials , 1989 , 33
Copyright
Copyright © Materials Research Society 1989

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Poate, J.M. and Williams, J.S., in Ion Implantation and Beam Processing, eds. Williams, J.S. and Poate, J.M. (Academic, Sydney, 1984) p. 13.Google Scholar
2. Wen, D.S., Smith, P.L., Osburn, C.M. and Rozgonyi, G.A., Appl. Phys. Lett. 51, 1182 (1987).Google Scholar
3. Nicolet, M.A. and Lau, S.S., in Materials and Process Characterization, eds. Einspruch, N.G. and Larrabee, G.B. (Academic, New York, 1983) p. 329.Google Scholar
4. d'Heurle, F.M. and Gas, P., J. Mater. Res. 1, 205 (1986).Google Scholar
5. Lur, W. and Chen, L.J., J. Appl. Phys. 64, 3505 (1988).Google Scholar
6. Lur, W., Cheng, J.Y., Chu, C.H., Wang, M.H., Lee, T.C., Wann, Y.J., Chao, W.Y., and Chen, L.J., Nucl. Instrum. Methods B 39, 297 (1989).Google Scholar
7. Seidel, T.E., Lischner, D.J., Pai, C.S., Knoell, R.V., Maher, D.M., and Jacobson, D.C., Nuclear Instrum. Methods B7/8, 251 (1985).Google Scholar
8. Ohdomari, I., Konuma, K., Takano, M., Chikyow, T., Kawarada, H., Nakanishi, J., and Ueno, T., Mater. Res. Soc. Symp. Proc. 54, 63 (1986).Google Scholar
9. Murarka, S.P., and Williams, D.S., J. Vac. Sci. Technol. B 5, 1674 (1987).Google Scholar
10. Gas, P., Deline, V., d'Heurle, F.M., Michel, A., and Scilla, G., J. Appl. Phys. 60, 1634 (1986).Google Scholar
11. Wilson, R.G., J. Appl. Phys. 54, 6879 (1983).Google Scholar