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Relaxation of SiGe Films for the Fabrication of Strained Si Devices

  • J.S. Maa (a1), D. J. Tweet (a1), J.J. Lee (a1), S.T. Hsu (a1), K. Fujii (a2), T. Naka (a2), T. Ueda (a2), T. Baba (a2), N. Awaya (a2) and K. Sakiyama (a2)...

Abstract

For the fabrication of bulk strained Si devices, a thin Si layer is deposited on a virtual substrate consisting of a several μm thick compositionally graded SiGe layer. A simpler approach utilizing H or He implantation to enhance relaxation of a thin SiGe film was recently reported. In this current work, hydrogen implantation is used to enhance the SiGe relaxation; and, relaxation beyond the previous reported limit is demonstrated. Experiments are performed on CVD deposited SiGe films with Ge fractions ranging from 20% to 40 % and thickness in the range of 100nm to about 500nm. After annealing at 800°C, relaxation of more than 80% is achieved. PMOS and NMOS devices are successfully fabricated and much enhanced hole and electron mobilities are demonstrated.

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Relaxation of SiGe Films for the Fabrication of Strained Si Devices

  • J.S. Maa (a1), D. J. Tweet (a1), J.J. Lee (a1), S.T. Hsu (a1), K. Fujii (a2), T. Naka (a2), T. Ueda (a2), T. Baba (a2), N. Awaya (a2) and K. Sakiyama (a2)...

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