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Relationship Between Interface Structure and Schottky Barrier Height

  • R. T. Tung (a1), J. P. Sullivan (a1) and F. Schrey (a1)

Abstract

The clear dependence of the Schottky barrier height (SBH) on the structure of a metalsemiconductor (MS) interface is described for a few high-quality epitaxial MS systems. Polycrystalline MS interfaces, for which such a dependence is often absent, are shown to display clear evidence for SBH inhomogeneity, in direct conflict with the Fermi level (FL) pinning concept they helped to create. Recent theoretical calculations show that many basic tenets of the interface state pinning models are unfounded. The redistribution of charge as a result of bonding at the MS interface seems to be the most important contribution to the interface dipole and, hence, the SBH.

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1 Rhoderick, E. H. and Williams, R. H., Metal-Semiconductor Contacts, Clarendon Press, Oxford, 1988.
2 Bardeen, J., Phys. Rev. 771, 717 (1947).
3 Spicer, W. E., Lindau, I., Skeath, P., Su, C. Y., and Chye, P. W., Phys. Rev. Lett. 44, 420 (1980).
4 Daw, M. S. and Smith, D. L., Solid-St. Commun. 37, 205 (1981).
5 Heine, V., Phys. Rev. A 138, 1689 (1965).
6 Tejedor, C., Flores, F., and Louis, E., J. Phys. C 10, 2163 (1977).
7 Tung, R. T., Lett., Phys. Rev. 52, 461 (1984).
8 Hauenstein, R. J., Schlesinger, T. E., McGill, T. C., Hunt, B. D., and Schowalter, L. J., Appl. Phys. Lett. 47, 853 (1985).
9 Ospelt, M., Henz, J., Flepp, L., and von Känel, H., Appl. Phys. Lett. 52, 227 (1988).
10 Tung, R. T., Levi, A. F. J., Sullivan, J. P., and Schrey, F., Phys. Rev. Lett. 66, 72 (1991).
11 Sullivan, J. P., Tung, R. T., Eaglesham, D. J., Schrey, F., and Graham, W. R., J. Vac. Sci. Technol. B 11, 1564 (1993).
12 Sullivan, J. P., Graham, W. R., Schrey, F., Eaglesham, D. J., Kola, R., and Tung, R. T., MRS Symp. Proc. 320, in press (1994).
13 Heslinga, D. R., Weitering, H. H., van der Werf, D. P., Klapwijk, T. M., and Hibma, T., Phys. Rev. Lett. 64, 1585 (1990).
14 Weitering, H. H., Sullivan, J. P., Carolissen, R. J., Graham, W. R., and Tung, R. T., Appl. Surface Sci. 70/71, 422 (1993).
15 Griffiths, C. L., Anyele, H. T., Matthai, C. C., Cafolla, A. A., and Williams, R. H., J. Vac. Sci. Technol. B 11, 1559 (1993).
16 Palmstrom, C. J., Cheeks, T. L., Gilchrist, H. L., Zhu, J. G., Carter, C. B., Wilkens, B. J., and Martin, R., J. Vac. Sci. Technol. A 10, 1946 (1992).
17 Ludeke, R., -C. Chiang, T., and Eastman, D. E., J. Vac. Sci. Technol. 21, 599 (1982).
18 Cho, A. Y. and Dernier, P. D., J. Appl. Phys. 49, 3328 (1978).
19 Wang, W. I., J. Vac. Sci. Technol. B 1, 574 (1983).
20 Hirose, K., Akimoto, K., Hirosawa, I., Mizuki, J., Mizutani, T. and J., Matsui, Phys. Rev. B 43, 4538 (1991).
21 Das, G. P., Blöchl, P., Andersen, O. K., Christensen, N. E., and Gunnarsson, O., Phys. Rev. Lett. 63, 1168 (1989).
22 Fujitani, H. and Asano, S., Phys. Rev. B 42, 1696 (1990).
23 van Schilfgaarde, M. and Newman, N., Phys. Rev. Lett. 65, 2728 (1990).
24 Charlesworth, J. P. A., Godby, R. W., Needs, R. J., and Sham, L. J., Mater. Sci. Eng. B 14, 262 (1992).
25 Dandrea, R. G. and Duke, C. B., J. Vac. Sci. Technol. B 11, 1553 (1993).
26 Tung, R. T., Phys. Rev. B 45, 13509 (1992).
27 Sullivan, J. P., Tung, R. T., Pinto, M., and Graham, W. R., J. Appl. Phys. 70, 7403 (1991).
28 Yu, A. Y. C. and Snow, E. H., J. Appl. Phys. 39, 3008 (1968).
29 Andrews, J. M. and Lepselter, M. P., Solid-St. Electron. 13, 1011 (1970).
30 Padovani, F. A. and Sumner, G. G., J. Appl. Phys. 36, 3744 (1965).
31 Thanailakis, A. and Rasul, A., J. Phys. C 9, 337 (1976).
32 Freeouf, J. L., Jackson, T. N., Laux, S. E., and Woodall, J. M., Appl. Phys. Lett. 40, 634 (1982).
33 Freeouf, J. L., Solid State Commun. 33, 1059 (1980).
34 Kurtin, S., McGill, T. C., and Mead, C. A., Phys. Rev. Lett. 22, 1433 (1970).
35 Schmid, P. E., Helvetica Physica Acta 58, 371 (1985).
36 Mönch, W., Phys. Rev. Lett. 58, 1260 (1987).
37 Andrews, J. M. and Phillips, J. C., Phys. Rev. Lett. 35, 56 (1975).
38 Ottaviani, G., Tu, K. N., and Mayer, J. W., Phys. Rev. lett. 44, 284 (1980).
39 Tersoff, J., Phys. Rev. Lett. 52, 465 (1984).
40 Mead, C. A. and Spitzer, W. G., Phys. Rev. 134, A713 (1964).
41 Parker, G. H., McGill, T. C., Mead, C. A., and Hoffman, D., Solid-St. Electron. 11, 201 (1968).
42 Zur, A., McGill, T. C., and Smith, D. L., Phys. Rev. B 28, 2060 (1983).

Relationship Between Interface Structure and Schottky Barrier Height

  • R. T. Tung (a1), J. P. Sullivan (a1) and F. Schrey (a1)

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