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Relation Between Defect Density and Conductivity Changes with Light-Soaking and Annealing in a-Si:H

Published online by Cambridge University Press:  21 February 2011

T. Shimizu ,
M. Iwami ,
T. Okagawa ,
A. Morimoto  and
M. Kumeda
T. Shimizu
Affiliation:
Department of Electronics, Kanazawa Univ., Kanazawa 920, Japan.
M. Iwami
Affiliation:
Department of Electronics, Kanazawa Univ., Kanazawa 920, Japan.
T. Okagawa
Affiliation:
Department of Electronics, Kanazawa Univ., Kanazawa 920, Japan.
A. Morimoto
Affiliation:
Department of Electronics, Kanazawa Univ., Kanazawa 920, Japan.
M. Kumeda
Affiliation:
Department of Electronics, Kanazawa Univ., Kanazawa 920, Japan.
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Abstract

It is found in a-Si:H and N-doped a-Si:H that the ESR spin density Ns increases and saturates with light-soaking slower than the dark- and photoconductivities (αd and αp) do. In the recovery process by annealing, the change in Nsalso occurs slower than αd and αp. From the measurement of the activation energy for αd the change in αd is found to originate mainly from the movement of the Fermi level Ef. In order to elucidate the origin of different behaviors between Ns and αd or αp, the light-induced ESR and the constant photocurrent method measurements have been carried out.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 258: Symposium A – Amorphous Silicon Technology – 1992 , 1992 , 455
Copyright
Copyright © Materials Research Society 1992

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References

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