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Refractory Silicide Schottky Contacts To Gaas

Published online by Cambridge University Press:  26 February 2011

N. Yokoyama ,
T. Ohnishi ,
T. Nakamura  and
H. Nishi
N. Yokoyama
Affiliation:
Fujitsu Laboratories Ltd., 10–1 Morinosato-Wakamiya, Atsugi 243–01, Japan
T. Ohnishi
Affiliation:
Fujitsu Laboratories Ltd., 10–1 Morinosato-Wakamiya, Atsugi 243–01, Japan
T. Nakamura
Affiliation:
Fujitsu Laboratories Ltd., 10–1 Morinosato-Wakamiya, Atsugi 243–01, Japan
H. Nishi
Affiliation:
Fujitsu Laboratories Ltd., 10–1 Morinosato-Wakamiya, Atsugi 243–01, Japan
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Abstract

Refractory suicides form high temperature stable Schottky contacts to GaAs. This finding enabled us to develop self-aligned GaAs MESFETs, thereby enabling the development of today's GaAs ICs. This paper reviews electrical and metallurgical studies on refractory-metal/GaAs and refractory-metal-si licide/GaAs interfaces. We emphasize the fact that W5Si3/GaAs contacts have extremely stable electrical properties even after annealing at temperatures up to 850°C. Crystallographical properties of the W5S3 film on GaAs, investigated by x-ray and TEM measurement techiques, are also covered. We found that the Schottky electrical characteristics are not affected by whether the film is amorphous or crystalline.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 54: Symposium E – Thin Films–Interfaces and Phenomena , 1985 , 401
Copyright
Copyright © Materials Research Society 1986

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References

REFERENCES

[1] Yokoyama, N., Mimura, T., Fukuta, M., and Ishikawa, H., 1981 ISSCC Digestof Technical Papers, pp.218–219.Google Scholar
[2] Kohn, E.,in IEDM Tech. Dig. pp. 469–472 (1979).Google Scholar
[3] Yokoyama, N., Ohnishi, T., Odani, K., and Abe, M., in IEDM Tech. Dig.pp. 80–83 (1981).Google Scholar
[4] Yokoyama, N., Ohnishi, T., Odani, K., Onodera, H., and Abe, M., IEEE Trans. on Electron Devices, ED-29, pp. 1541–1547 (1982).Google Scholar
[5] Yokoyama, N., Ohnishi, T., and Misugi, T., in Layered Structures and Interface Kinetics: Their Technology and Applications, Furukawa, S. ed.(KTK Scientific Pubi ishers/ Tokyo, REIDEL/Dordrecht, Boston, London, 1985) pp.315–328.Google Scholar
[6] Ohnishi, T., Yokoyama, N., Onodera, H., Suzuki, S., and Shibatomi, A., Appl. Phys. Lett. 43(6), pp. 600–602 (1983).Google Scholar
[7] Jackson, T.N. and Degelormo, J.F., J. Vac. Sci. Technol B, vol.3, No.6, Nov./Dec. (1985).Google Scholar
[8] Yokoyama, N., Ohnishi, T., Onodera, H., Shinoki, T., Shibatomi, A., and Ishikawa, H., 1983 ISSCC Digest of Technical Papers, pp.44–45.Google Scholar
[9] Yokoyama, N., Ohnishi, T., Onodera, H., Shinoki, T., Shibatomi, A., and Ishikawa, H., IEEE J. Solid-State Circuits SC-18, pp.520–524 (1983).Google Scholar
[10] Nakayama, Y., Suyama, K., Shimizu, H., Yokoyama, N., Shibatomi, A., and Ishikawa, H., 1983 ISSCC Digest of Technical Papers, pp.48–49.Google Scholar
[11] Yokoyama, N., Onodera, H., Shinoki, T., Ohnishi, H., Nishi, H., and Shibatomi, A., 1984 ISSCC Digest of Technical Papers, pp.44–45.Google Scholar
[12] Kawata, H., Onodera, H., Shinoki, T., Yokoyama, N., and Nishi, H., Extended Abstracts of the 17th Conf. on Solid State Devices and Materials, Tokyo, 1985, pp.409–412.Google Scholar