Hostname: page-component-848d4c4894-sjtt6 Total loading time: 0 Render date: 2024-06-30T22:31:21.570Z Has data issue: false hasContentIssue false
  • English
  • Français

Refractive Index memory effect of ferroelectric materials by domain control

Published online by Cambridge University Press:  20 January 2011

Kazuhiko INOUE  and
Takeshi MORITA
Kazuhiko INOUE
Affiliation:
Graduate School of Frontier Sciences, The University of Tokyo. 5-1-5 Kashiwanoha, Chiba, Kashiwa 277–8563, Japan.
Takeshi MORITA
Affiliation:
Graduate School of Frontier Sciences, The University of Tokyo. 5-1-5 Kashiwanoha, Chiba, Kashiwa 277–8563, Japan.
Get access

Abstract

Ferroelectric electro-optics materials are widely studied for optical applications, such as optical switches, optical scanners, and optical shutters. However, conventional operation of those devices requires a continuous external electrical field. On the other hand, our group proposes an optical property memory effect by controlling domain structure as either full-polarized or depolarized state using asymmetric voltage operation. The optical property memory effect can keep its optical value, such as refractive index and light transmittance without any external electrical field. In this study, it was confirmed that the refractive index state had two stable values depending on domain conditions. This memory effect should be useful for innovative optical switch or scanner in the future.

Keywords

ferroelectricoptoelectronicoptical properties
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1299: Symposium S – Microelectromechanical Systems—Materials and Devices IV , 2011 , mrsf10-1299-s13-03
Copyright
Copyright © Materials Research Society 2011

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Maldonado, J. R. and Meitzler, A. H., Proc. of IEEE, 59, 368 (1971).CrossRefGoogle Scholar
2. Smith, W. D. and Land, C. E., Appl. Phys. Lett., 20, 169 (1972).CrossRefGoogle Scholar
3. Land, C. E. and Smith, W. D., Appl. Phys. Lett., 23, 57 (1973).CrossRefGoogle Scholar
4. Land, C. E., Ferroelectrics, 7, 45 (1974).CrossRefGoogle Scholar
5. Uchino, K., Ceramics International, 21, 309 (1995).10.1016/0272-8842(95)96202-ZCrossRefGoogle Scholar
6. Shames, P. E., Sun, P. C., and Fainman, Y., Appl. Opt. 37, 3717 (1998).CrossRefGoogle Scholar
7. Ohashi, T., Hosaka, H., and Morita, T., Jpn. J. Appl. Phys., 47, 3985 (2008).CrossRefGoogle Scholar
8. Ohashi, T., Hosaka, H., and Morita, T., Appl. Phys. Lett., 93, 192102 (2008) .CrossRefGoogle Scholar
9. Morita, T., Kadota, Y., and Hosaka, H., Appl. Phys. Lett., 90, 082909 (2007).CrossRefGoogle Scholar
10. Kadota, Y., Hirota, H., and Morita, T., Jpn. J. Appl. Phys., 47, 217 (2008).CrossRefGoogle Scholar
11. Kadota, Y., Hosaka, H., and Morita, T., Proceedings of the Material Research Society Fall meeting 2008, C9–32, (2008).Google Scholar
12. Kadota, Y., Hosaka, H., and Morita, T., Proceedings of the JSME-IIP/ISPS, 331 (2009).Google Scholar
13. Inoue, K. and Morita, T., J. Kor. Phys. Soc., 57, 855 (2010).CrossRefGoogle Scholar