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Reflectivity of Silicon-on-Sapphire During Pulsed Laser Annealing

Published online by Cambridge University Press:  22 February 2011

Y. H. Chen  and
S. A. Lyon
Y. H. Chen
Affiliation:
Intel Corporation, Santa Clara, CA 95051
S. A. Lyon
Affiliation:
Department of Electrical Engineering and Computer Science, Princeton University, Princeton, NJ 08544
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Abstract

Using a visible probe laser (632.8 nm) we have directly observed motion of the melt front in silicon-on-sapphire during pulsed laser annealing. The average penetration and regrowth velocities have been determined to be 13 and 6.5 m/sec. respectively. These values are in agreement with recent conductivity measurements and heat flow calculations. In addition, the data demonstrate that the high-reflectivity phase can penetrate at least .5 um (Si thickness) and requires a significant amount of the time to do so. These results are further evidence that the high–reflectivity phase is molten silicon.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 23 , 1983 , 173
Copyright
Copyright © Materials Research Society 1984

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References

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