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Reduction of Residual Transient Photocurrents in A Si:H Elevated Photodiode Array Based Cmos Image Sensors

Published online by Cambridge University Press:  01 February 2011

Jeremy A. Theil
Jeremy A. Theil*
Affiliation:
Agilent Technologies, Santa Clara, CA, 95051,U.S.A.
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Abstract

While a-Si:H based elevated photodiode arrays hold the promise of superior performance and lower cost CMOS-based image sensors relative to those based upon crystalline silicon photodiodes, the one area where a-Si:H based sensor performance has not been as good is in image lag. This problem is only exacerbated by Staebler Wronski Effect induced junction degradation. Image lag is caused by residual charge from photocurrents trapped within the junction once the light source is removed and can be measured for several seconds, even under continuous applied reverse bias. It is seen both in constant and variable bias pixel architectures. However, by carefully controlling a-Si:H junction bias conditions, it is possible to significantly reduce these transient photocurrents. This article will describe how the photocurrent decay time exponent can be reduce by almost an order of magnitude. Finally the physical causes behind image lag in a-Si:H based photodiode arrays will be discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 869: Symposium D – Materials, Integration and Technology for Monolithic Instruments , 2005 , D1.3
Copyright
Copyright © Materials Research Society 2005

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References

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