One of the major challenges affecting the performance of Npn AlGaN/GaN heterojunction bipolar transistors (HBTs) is the high base access resistance, which is comprised of the base contact resistance and the base bulk resistance. A novel concept is proposed to reduce the base access resistance in Npn AlGaN/GaN HBTs by employing polarization-enhanced contacts and selective epitaxial growth of the base and emitter. In addition, this technique reduces the exposed base surface area, which results in a lower surface recombination current. Such a structure would enable better performance of AlGaN/GaN HBTs in terms of higher current gain and a lower offset voltage. Theoretical calculations on polarization-enhanced contacts predict p-type specific contact resistance lower than 10-5 Ωcm2. Experimental results using transmission line measurement (TLM) technique yield specific contact resistances of 5.6×10-4 Ωcm2 for polarization-enhanced p-type contacts and 7.8×10-2 Ωcm2 for conventional p-type contacts.