Hostname: page-component-76fb5796d-skm99 Total loading time: 0 Render date: 2024-04-25T07:35:33.074Z Has data issue: false hasContentIssue false

Record Conductivity for P-Type Transparent Conductors in Polycrystalline Thin Films of a Sulfide-Fluoride

Published online by Cambridge University Press:  01 February 2011

Jesse Frantz
Affiliation:
jfrantz@ccs.nrl.navy.mil, SFA, Inc., Contractor, 2200 Defense Hwy., Suite 405, Crofton, MD, 21114, United States, 202-767-9519
Jasbinder S. Sanghera
Affiliation:
sanghera@nrl.navy.mil, U.S. Naval Research Laboratory, Code 5606, 4555 Overlook Ave. SW, Washington, DC, 20375, United States
Syed B. Qadri
Affiliation:
syed.qadri@nrl.navy.mil, U.S. Naval Research Laboratory, Code 5606, 4555 Overlook Ave. SW, Washington, DC, 20375, United States
Ishwar D. Aggarwal
Affiliation:
ishwar.aggarwal@nrl.navy.mil, U.S. Naval Research Laboratory, Code 5606, 4555 Overlook Ave. SW, Washington, DC, 20375, United States
Get access

Abstract

Barium copper sulfur fluoride thin films with a face-centered cubic phase in the Fm3m space group were synthesized via RF magnetron sputtering. The results of a detailed optical and electronic characterization of the films are presented. As-deposited, they exhibit degenerate p-type conductivity at room temperature of approximately 260 S/cm – higher than that of any previously reported p-TC. Their conductivity after post-deposition processing increases to as high as 800 S/cm. The films exhibit bandgaps ranging from 1.45-1.75 eV. They are typically deposited with a substrate temperature between room temperature and 100°C, making them suitable for deposition on plastic as well as glass or crystalline substrates. It was found that a silica protective layer reduces degradation in film transparency that is caused by exposure to air.

Type
Research Article
Copyright
Copyright © Materials Research Society 2008

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Zhu, W., Huang, Y., Wu, F., Dong, C., Chen, H., and Zhao, Z., Materials Res. Bull. 29, 505–8 (1994).Google Scholar
2 Yanagi, H., Park, S., Draeske, A., Keszler, D., and Tate, J., J. Solid State Chem. 175, 34–8 (2003).Google Scholar
3 Frantz, J. A. Sanghera, J. S. Nguyen, V. Q. Bayya, S. S. Qadri, S. B. Aggarwal, I. D. Materials Lett. 62 (10-11), 1582–4 (2008).Google Scholar
4 Nagarajan, R., Draeseke, A. D. Sleight, A. W. Tate, J., J. Appl Phys. 89, 8022–5 (2001)Google Scholar