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Recombination Parameters in InGaAsSb Epitaxial Layers for Thermophotovoltaic Applications

Published online by Cambridge University Press:  01 February 2011

R. J. Kumar ,
R. J. Gutmann ,
J.M. Borrego ,
P. S. Dutta ,
C. A. Wang ,
R.U. Martinelli  and
G. Nichols
R. J. Kumar
Affiliation:
Center for Integrated Electronics, Rensselaer Polytechnic Institute, Troy, NY 12180
R. J. Gutmann
Affiliation:
Center for Integrated Electronics, Rensselaer Polytechnic Institute, Troy, NY 12180
J.M. Borrego
Affiliation:
Center for Integrated Electronics, Rensselaer Polytechnic Institute, Troy, NY 12180
P. S. Dutta
Affiliation:
Center for Integrated Electronics, Rensselaer Polytechnic Institute, Troy, NY 12180
C. A. Wang
Affiliation:
Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, MA 02420
R.U. Martinelli
Affiliation:
Sarnoff Corporation, Princeton, NJ 08543
G. Nichols
Affiliation:
Lockheed Martin, Schenectady, NY 12301
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Abstract

Radio-frequency (RF) photoreflectance measurements and one-dimensional device simulations have been used to evaluate bulk recombination parameters and surface recombination velocity (SRV) in doubly-capped 0.55-eV p-InGaAsSb epitaxial layers, doped at 2 × 1017 cm-3, for thermophotovoltaic (TPV) applications. Bulk lifetimes of 90 to 100 ns and SRVs of 680 cm/s to 3200 cm/s (depending on the capping layer) are obtained, with higher doping and higher bandgap capping layers most effective in reducing SRV. RF photoreflectance measurements and one-dimensional device simulations are compatible with a radiative recombination coefficient (B) of 3 × 10-11 cm3/s and Auger coefficient (C) of 1 × 10-28 cm6/s.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 763: Symposium B – Compound Semiconductor Photovoltaics , 2003 , B2.4
Copyright
Copyright © Materials Research Society 2003

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