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Recombination Dynamics in Nitride Quantum Boxes and Quantum Wells for Colors Ranging from the UV to the Red

Published online by Cambridge University Press:  17 March 2011

P. Lefebvre ,
A. Morel ,
M. Gallart ,
T. Taliercio ,
B. Gil ,
J. Allègre ,
H. Mathieu ,
N. Grandjean ,
B. Damilano  and
J. Massies
P. Lefebvre
Affiliation:
Groupe d'Etude des Semiconducteurs, CNRS - Université Montpelllier II. Case Courrier 074. 34095 Montpellier Cedex 5, France
A. Morel
Affiliation:
Groupe d'Etude des Semiconducteurs, CNRS - Université Montpelllier II. Case Courrier 074. 34095 Montpellier Cedex 5, France
M. Gallart
Affiliation:
Groupe d'Etude des Semiconducteurs, CNRS - Université Montpelllier II. Case Courrier 074. 34095 Montpellier Cedex 5, France
T. Taliercio
Affiliation:
Groupe d'Etude des Semiconducteurs, CNRS - Université Montpelllier II. Case Courrier 074. 34095 Montpellier Cedex 5, France
B. Gil
Affiliation:
Groupe d'Etude des Semiconducteurs, CNRS - Université Montpelllier II. Case Courrier 074. 34095 Montpellier Cedex 5, France
J. Allègre
Affiliation:
Groupe d'Etude des Semiconducteurs, CNRS - Université Montpelllier II. Case Courrier 074. 34095 Montpellier Cedex 5, France
H. Mathieu
Affiliation:
Groupe d'Etude des Semiconducteurs, CNRS - Université Montpelllier II. Case Courrier 074. 34095 Montpellier Cedex 5, France
N. Grandjean
Affiliation:
Centre de Recherche sur l'Hétéro-Epitaxie et ses Applications, CNRS. Rue Bernard Grégory. 06560 Valbonne, France
B. Damilano
Affiliation:
Centre de Recherche sur l'Hétéro-Epitaxie et ses Applications, CNRS. Rue Bernard Grégory. 06560 Valbonne, France
J. Massies
Affiliation:
Centre de Recherche sur l'Hétéro-Epitaxie et ses Applications, CNRS. Rue Bernard Grégory. 06560 Valbonne, France
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Abstract

Time-resolved photoluminescence experiments at varying temperature are performed on a series of InxGa1−xN/GaN quantum well and quantum box samples of similar compositions (0.15 < x < 0.20). The results are analyzed by using envelope-function calculations of transition energies and oscillator strengths, accounting for internal electric fields. The respective influences of localization and electric fields on radiative and nonradiative lifetimes and on the Stokes shift are deduced. The results indicate that the spatial extension of localization centers is much smaller than the size of the quantum boxes (∼10 × 3 nm, typically). The room-temperature radiative efficiency of both quantum well and quantum box samples is enhanced by replacing the topmost GaN barrier by an AlGaN one.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 639: Symposium G – GaN and Related Alloys-2000 , 2000 , G10.1
Copyright
Copyright © Materials Research Society 2001

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References

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