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Real-time Optical Monitoring of Epitaxial Growth Processes by p-Polarized Reflectance Spectroscopy

Published online by Cambridge University Press:  15 February 2011

Nikolaus Dietz  and
Klaus J. Bachmannb
Nikolaus Dietz
Affiliation:
Departments of Physics, North Carolina State University, Raleigh, NC 27695-7919 Materials Science and Engineering andNorth Carolina State University, Raleigh, NC 27695-7919
Klaus J. Bachmannb
Affiliation:
Materials Science and Engineering andNorth Carolina State University, Raleigh, NC 27695-7919 Chemical EngineeringNorth Carolina State University, Raleigh, NC 27695-7919
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Abstract

In this paper we introduce a real-time optical probe technique, p-polarized reflectance spectroscopy (PRS), for the monitoring of epitaxial growth processes. GaP heteroepitaxy by pulsed chemical beam epitaxy (PCBE) is used as an example. PRS allows to follow the deposition process with submonolayer resolution, utilizing a fine structure that is superimposed to the interference oscillations in the reflected intensity. This fine structure is explained by the periodic alteration of the surface reaction chemistry under pulsed chemical precursor supply. In the case of epitaxial GaP growth, it is modeled for a four layer stack, including an ultra-thin surface reaction layer of periodically changing thickness do(t) and dielectric function εo(t) tied to the periodic surface exposure to tertiarybutyl phosphine (TBP) and triethylgallium (TEG) pulses, respectively. The imaginary part of the dielectric function, εO2, of this surface reaction layer can be determined directly from the distance of the inflection points in the fine structure, where the optical response to the first precursor pulse in the cycle sequence changes sign, from the closests interference minimum. The surface reaction kinetics can be studied by analyzing the decay time characteristic in the transients of the fine structure.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 406: Symposium L – Diagnostic Techniques for Semiconductor Materials Processing , 1995 , 341
Copyright
Copyright © Materials Research Society 1996

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