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Real-Time Investigation of NanoFET Current Surge Capability During Heavy Ion Irradiation

Published online by Cambridge University Press:  28 February 2013

Kan Xie
Affiliation:
Department of Electrical and Computer Engineering, Michigan State University, East Lansing, MI 48824, USA
Steven Allen Hartz
Affiliation:
Department of Electrical and Computer Engineering, Michigan State University, East Lansing, MI 48824, USA
Virginia M. Ayres
Affiliation:
Department of Electrical and Computer Engineering, Michigan State University, East Lansing, MI 48824, USA
Zhun Liu
Affiliation:
Department of Electrical and Computer Engineering, Michigan State University, East Lansing, MI 48824, USA
Benjamin W. Jacobs
Affiliation:
Department of Electrical and Computer Engineering, Michigan State University, East Lansing, MI 48824, USA
Thomas Baumann
Affiliation:
National Superconducting Cyclotron Laboratory, Michigan State University, East Lansing, MI 48824, USA
Reginald M. Ronningen
Affiliation:
National Superconducting Cyclotron Laboratory, Michigan State University, East Lansing, MI 48824, USA
Albert F. Zeller
Affiliation:
National Superconducting Cyclotron Laboratory, Michigan State University, East Lansing, MI 48824, USA
Mary Anne Tupta
Affiliation:
Keithley Instruments, Inc., Cleveland, OH 44139, USA
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Abstract

The real-time electronic performance of a gallium nitride nanowire-based field effect transistor was investigated at five-minute intervals over thirty minutes of continuous irradiation by Xenon-124 relativistic heavy ions. An initial current surge that resulted in device improvement rather than device failure was observed. The current surge, and subsequent electronic behavior, was modeled using a combined thermionic emission-tunnelling approach, leading to information about barrier height, carrier concentrations, expected temperature behavior, and tunnelling.

Type
Articles
Copyright
Copyright © Materials Research Society 2013

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References

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