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Real Time Control of III-V Semiconductor Surfaces During Movpe Growth by Reflectance Anisotropy Spectroscopy

Published online by Cambridge University Press:  22 February 2011

K. Ploska ,
W. Richter ,
F. Reinhardt ,
J. JÖnsson ,
J. Rumberg  and
M. Zorn
K. Ploska
Affiliation:
GOS e.V. Rudower Chaussee 6, 12489 Berlin, Germany
W. Richter
Affiliation:
Technische Universität Berlin, Institut für Festkörperphysik, Sekr. PN 6-1, Hardenbergstr. 36, 10623, Berlin
F. Reinhardt
Affiliation:
Technische Universität Berlin, Institut für Festkörperphysik, Sekr. PN 6-1, Hardenbergstr. 36, 10623, Berlin
J. JÖnsson
Affiliation:
Technische Universität Berlin, Institut für Festkörperphysik, Sekr. PN 6-1, Hardenbergstr. 36, 10623, Berlin
J. Rumberg
Affiliation:
Technische Universität Berlin, Institut für Festkörperphysik, Sekr. PN 6-1, Hardenbergstr. 36, 10623, Berlin
M. Zorn
Affiliation:
Technische Universität Berlin, Institut für Festkörperphysik, Sekr. PN 6-1, Hardenbergstr. 36, 10623, Berlin
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Abstract

Reflectance anisotropy spectroscopy (RAS) is presented as real time analytical tool for metalorganic vapourphase epitaxy (MOVPE) of III-V-semiconductors. This optical method derives its surface sensitivity from the anisotropy of surface structures. It is shown that it is possible to monitor with RAS the oxide desorption from the substrate and that the substrate surface conditions thereafter, still in the pregrowth stage, can be correlated with certain reconstructions of the (001)-surfaces of InP and GaAs. The latter is possible through simultaneous RAS and RHEED measurements during MBE (molecular beam epitaxy) or MOMBE (metalorganic molecular beam epitaxy). Characteristic spectral features are also observed for other binary or ternary III-V-semiconductors. Time resolved measurements during growth give monolayer resolution for the growth rate in the case of GaAs. In the study of heterointerface growth exchange reactions between As and P together with their corresponding reaction time constants can be monitored and conclusions for the epitaxial growth procedure can be drawn.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 334: Symposium W – Gas-Phase and Surface Chemistry in Electronic Materials Processing , 1993 , 155
Copyright
Copyright © Materials Research Society 1994

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References

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