Hostname: page-component-76fb5796d-2lccl Total loading time: 0 Render date: 2024-04-26T17:47:46.630Z Has data issue: false hasContentIssue false
  • English
  • Français

Reactive Sputtiering in Oxidizing/Reducing Atmospheres

Published online by Cambridge University Press:  22 February 2011

J. D. Klein ,
A. Yen  and
S. L. Clauson
J. D. Klein
Affiliation:
EIC Laboratories, Norwood, MA 02062
A. Yen
Affiliation:
EIC Laboratories, Norwood, MA 02062
S. L. Clauson
Affiliation:
EIC Laboratories, Norwood, MA 02062
Get access

Abstract

The deposition of thin films by magnetron sputtering is readily influenced by the reduction/oxidation characteristics of the plasma. Unfortunately, the redox state of the sputter plasma is often inadvertently determined by uncontrolled factors such as transient evolution of species from the target. Undesirable variations in film and target properties can be avoided by actively setting the redox conditions. This is most readily accomplished by including two competing species, one oxidizing and the other reducing, in the chamber gas mixture. Optical emission spectroscopy, an in-situ process monitor, was employed to observe redox interactions in nominally unreactive dc sputtering of YBCO and reactive rf sputtering of IrO2. Optical spectroscopy of YBCO sputtering reveals that the intensity of atomic oxygen emissions decreases with H2 additions to the sputter gas blend.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 324: Symposium K – Diagnostic Techniques for Semiconductor Materials Processing , 1993 , 347
Copyright
Copyright © Materials Research Society 1994

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Gavaler, J.R., Talvacchio, J., Braggins, T.T., Forrester, M.G., and Greggi, J., J. Appl. Phys. 70, 4383 (1991).Google Scholar
2. Cukauskas, E.J., Allen, L.H., Sherrill, G.K., and Holm, R.T., Appl. Phys. Lett. 61, 1125 (1992).Google Scholar
3. Krumme, J-P., Hack, R.A.A., and Raaijmakers, I.J.M.M., J. Appl. Phys. 70, 6743 (1991).CrossRefGoogle Scholar
4. Klein, J.D., Clauson, S.L., and Cogan, S.F., J. Vac. Sci. Technol. A 7, 3043 (1989).CrossRefGoogle Scholar
5. Klein, J.D., Clauson, S.L., and Cogan, S.F., J. Mater. Res. 4, 1505 (1989).CrossRefGoogle Scholar
6. Klein, J.D. and Yen, A., J. Vac. Sci. Technol. A, 9, 2791 (1991).Google Scholar
7. Klein, J.D. and Yen, A., J. Appl. Phys., 70, 505 (1991).Google Scholar
8. Klein, J.D. and Yen, A. in Ferroelectrics Thin Films II, edited by Kingon, A.I., Myers, E.R., and Tuttle, B. (Mater. Res. Soc. Proc. 243, Pittsburgh, PA 1992) pp. 167–172.Google Scholar
9. Klein, J.D. and Yen, A. in Solid State Ionics II, edited by Nazri, G-A., Shriver, D.F., Huggins, R.A., and Balkanski, M. (Mater. Res. Soc. Proc. 210, Pittsburgh, PA 1991) pp. 75–80.Google Scholar
10. CRC Handbook of Chemistry and Physics. 59th edition ed. by Weast, R.C. (CRC Press, West Palm Beach, Florida 1978) pp. E–216.Google Scholar
11. Gaydon, A.G., The Spectroscopy of Flames (Chapman and Hall, London, 1974), p. 364.Google Scholar