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Reactive Plasma Sputter Deposition of Silicon Oxide

Published online by Cambridge University Press:  15 February 2011

K. K. Vossough  and
C. E. Hunt
K. K. Vossough
Affiliation:
Department of Electrical and Computer Engineering, University of California, Davis, CA 95616
C. E. Hunt
Affiliation:
Department of Electrical and Computer Engineering, University of California, Davis, CA 95616
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Abstract

Silicon dioxide films were reactively sputter deposited in argon/oxygen ambient using RF magnetron sputter deposition techniques. A substantial drop in the deposition rate at high enough partial pressure of the oxygen which is typical in reactive sputtering was observed. The best quality silicon dioxide films were obtained at the lower deposition rate, close to the deposition rate transition point. Higher quality films were obtained at higher RF powers with higher deposition rates. However, at 800 Watts RF, the so called negative ion effect dominates and results in higher surface roughness of the films, as seen by AFM results. Various characterization techniques including ellipsometry and wet chemical etching were used to compare stoichiometry and film density, respectively. MOS capacitor characterization along with breakdown voltages were also measured as a means of qualifying the films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 428: Symposium L – Materials Reliability in Microelectronics VI , 1996 , 367
Copyright
Copyright © Materials Research Society 1996

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