Hostname: page-component-8448b6f56d-wq2xx Total loading time: 0 Render date: 2024-04-23T20:35:54.474Z Has data issue: false hasContentIssue false
  • English
  • Français

Reactive Ion Etch of GaAs and AIGaAs Using BCl3, SiCl4 and SF6.Instead of CCl2F2

Published online by Cambridge University Press:  15 February 2011

J. W. Wu ,
C. Y. Chang ,
K. C. Lin ,
E. Y. Chang  and
J. H. Hwang
J. W. Wu
Affiliation:
Institute of Electronics National Chiao Tung University, Hsinchu, Taiwan, ROC.
C. Y. Chang
Affiliation:
Institute of Electronics National Chiao Tung University, Hsinchu, Taiwan, ROC.
K. C. Lin
Affiliation:
Institute of Electronics National Chiao Tung University, Hsinchu, Taiwan, ROC.
E. Y. Chang
Affiliation:
Institute of Materials Science and Engineering, National Chiao Tung University, Hsinchu, Taiwan, ROC.
J. H. Hwang
Affiliation:
Institute of Materials Science and Engineering, National Chiao Tung University, Hsinchu, Taiwan, ROC.
Get access

Abstract

In the past, CCl2F2 had been widely used in the dry etching process of the GaAs-based materials, However, it causes ozone depletion and is detrimental to the environment. In order to prevent further ozone depletion, it is necessary to search for some substitutedl gases. In this study, chloric gases, like BCl3 and SiCl4, were used to provide an alternative way for the reactive ion etch of GaAs and AlGaAs. To provide high etching selectivity between GaAs and AlGaAs, a fluorine containing gas SF6 is added, to increase the etch rate of GaAs than that of AlGaAs, which is due to the formation of non-volatile solid AlF3. In this study the etching characteristics of the BCl3/SF6, SiCl4/SF6 were studied and high etching selectivity between AlGaAs/GaAs is achieved.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 344: Symposium I – Materials and Processes for Environmental Protection , 1994 , 295
Copyright
Copyright © Materials Research Society 1994

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Vawter, G.A., Coldren, L.A., Mertz, J.M. and Hu, E L., Appl. Phys. Lett., 51, 719 (1987)Google Scholar
2. Coldren, L.A., Iga, K., Miller, B.I. and Rentschler, J.A., Appl. Phys. Lett., 37, 681 (1980)Google Scholar
3. Hu, E.L. and Coldren, L.A., SPIE J., 98 (1987)Google Scholar
4. Kuroda, S., Mimura, T., Suzuki, M., Kobayashi, N., Nishiuchi, N., Shibatomi, A. and Abe, M., GaAs Integrated Circuit Symp., Tech. Dig., IEEE, New York, 125 (1984)Google Scholar
5. Stern, M.B., Craighead, H.G., Liao, P.F. and Mankiewich, P.M., Appl. Phys. Lett., 45, 410 (1984)Google Scholar
6. Knoedler, C.M. and Kuech, T.F., J. Vac. sci. technol. B, 3, 1233 (1986)Google Scholar
7. Hikosaka, K., Mimura, T. and Joshin, K., Jpn. J. Appl. Phys., 20, L847 (1981)Google Scholar
8. Seabaugh, A. J. Vac. Sci. Technol. B 8, 77 (1988)Google Scholar
9. Salimian, S., IIICooper, C.B., Norton, R., and Bacon, J., Appl. Phys. Lett. 51, 1083 (1987)Google Scholar